A Low Noise Readout Integrated Circuit for Nb5n6 Microbolometer Array Detector

Zhou Jiang,Chao Wan,Peng Xiao,Chengtao Jiang,Xuecou Tu,Xiaoqing Jia,Lin Kang,Jian Chen,Peiheng Wu

DOI: https://doi.org/10.1117/12.2251400

2017-01-01

Abstract:We present a readout circuit for 1 x 64 Nb5N6 microbolometer array detector. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/root Hz. Due to the low noise of the detector, we design a low noise readout circuit with 64 channels. The readout integrated circuit (ROIC) is fabricated under CMOS process with 0.18 mu m design rule, which has built-in bias and adjustable numerical-controlled output current. Differential structure is used for each pixel to boost capacity of resisting disturbance. A multiplexer and the second stage amplifier is followed after the ROIC. It is shown that the ROIC achieves an average gain of similar to 47dB and a voltage noise spectral density of similar to 9.34nV/root Hz at 10KHz. The performance of this readout circuit nearly fulfills the requirements for THz array detector. This readout circuit is fit for the detector, which indicates a good way to develop efficient and low-cost THz detector system.