Abstract:Numerical simulations are performed to understand the variation of KDP crystal surface height by a rapid growth technique. The theoretical models used in numerical simulations couple the macroscopic transport of solute and impurities with the microscopic interfacial kinetics processes. Studies are specifically made to growth rate fluctuation at each growth interface subject to variations in crystal size, bulk supersaturation, rotation rate of the stirring paddle, and impurities. It is found that predicted interface moving speeds, equivalent to the growth rate, are uniformly distributed normal to each pyramidal and prismatic faces at macroscale by taking into account the interfacial kinetics process; however, they fluctuate wavily at microscale. The amplitude of growth rate fluctuation is on the order of micrometer. The fluctuation in growth rate will cause KDP crystal surface height variation and lead to the formation of micron-sized and nanosized inclusions in the crystals. Increasing crystal size and bulk supersaturation intensifies the fluctuation in the growth rate, which may reduce the quality of grown KDP crystal. Increasing paddle's rotational speed can make the fluctuation of the growth rate decrease. The impurities influence the growth rate of the KDP prismatic face obviously. When impurities exist in solution, the growth rate of the prismatic face decreases greatly and the fluctuation of the growth rate is enhanced by 1 order of magnitude.

Comprehensive Numerical Simulation Analysis of Flow and Mass Transfer by Tuning Inlet Conditions in Solution Circulating Technique Focused to Grow Quality Kdp Crystal

Numerical Simulation of Flow and Mass Transfer During Growth of the Long Seed KDP Crystals under 2D Translation Method

Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM

Numerical Simulation Research of the Crystal Growth Process of KDP with Different Rotation Radius

Three-Dimensional Computations of the Hydrodynamics and Mass Transfer During Growth of the Free-Long Seed Kdp Crystals with 2d Translation Method

Toward the Understanding of KDP Crystal Surface Height Variation by a Rapid Growth Technique

Numerical Simulation of Thermal Stress During the Steady Rotation in the Growth of ADP Crystals by Solution Circulating Method

Optimal Operating Conditions for the Rapid Growth of KH 2 PO 4 Crystal by Numerical Simulation

Rapid Growth of KDP Crystals in the [101] Direction

Optimizing Mass Transfer Control Using a Stirring Paddle for the Rapid Growth of KDP Crystals

Optimal operating conditions for the rapid growth of KH2PO4 crystal by numerical simulation

Experiment and Numerical Simulation of the Influence Mechanism of Kinetic Factors on Rapid Growth of KDP Crystal

Kdp Crystal Growth by Decreasing Temperature Using Supersaturation-Control System

Numerical Simulation of the Influence of Different Rotation Speeds on the Capping of Kdp Crystal

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Monte Carlo Simulation Study on Crystal Growth Mechanism and Kinetics

Research Progresses of KDP/DKDP Crystal Growth

NNUMERICAL ANALYSIS OF THERMAL AND FLOW FIELD IN THE GROWTH OF SINGLE-CRYSTAL INP

Research Progress in Numerical Simulation for Crystal Growth by Czochralski Method

Continuous Filtration System for Rapid Growth and Quality Analysis of KDP Crystals

Optimizing the Flow Conditions of the Horizontally Oriented DKDP Crystal by Adding a Stirring Paddle