Abstract:Self-heating of the device will intensify the thermo-mechanical effects, leading to an increase in thermal stress. Currently, most of the research focuses on strain engineering of the device by intentionally introducing mechanical stress. However, how thermal stress affects the performance of nanoscale transistors remains unclear. Thus, in this manuscript, a comprehensive coupled Multiphysics simulation is performed to investigate the self-heating induced thermal stress effects on quantum transport in the p-type ultrathin body (UTB)-FinFET. The quantum transport equation with consideration of thermal stress effects by the strain term in ${k}\cdot {p}$ Hamiltonian, heat conduction equation, and equilibrium equations of solid mechanics are solved self-consistently. Then, the impacts of self-heating-induced thermal stress on hole effective mass, hole average velocity, and current density of the FinFETs with different crystal orientation configurations and channel lengths are compared and analyzed. The simulation results show that thermal stress can decrease or increase the ON-state current depending on the crystal orientation configuration. Further analysis of the band structure obtained from the Hamiltonian shows that thermal stress can change the material properties such as the hole effective mass of the top subband, thus leading to the variations of device characteristics.

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Electrothermal characterization of SOI FinFETs

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Ultra Fast (<1 Ns) Electrical Characterization of Self-Heating Effect and Its Impact on Hot Carrier Injection in 14nm FinFETs

Investigation on self-heating effect in carbon nanotube field-effect transistors

Ultrafast pulse characterization of hot carrier injection effects on ballistic carrier transport for sub-100 nm MOSFETs

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Investigation of Thermal Effects on FinFETs in the Quasi-Ballistic Regime

Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge N-Mosfets

Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

A Ballistic Transport Study for Advanced Transistors in Post-Moore Era: Parasitic Resistance, Self-heating and Cryogenic Analysis

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Experimental Study On Quasi-Ballistic Transport In Silicon Nanowire Transistors And The Impact Of Self-Heating Effects

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Simulation of Ballistic and Non-Fourier Thermal Transport in Ultra-Fast Laser Heating