Realization of Nanostructured N-doped P-Type Bi2O3 Thin Films

Ying Wang,Liangxing Jiang,Jianyu Chen,Fangyang Liu,Yanqing Lai
DOI: https://doi.org/10.1016/j.matlet.2017.01.115
IF: 3
2017-01-01
Materials Letters
Abstract:N-doped p-type porous Bi2O3 nanoplates thin films (NPTFs) were firstly synthesized on FTO substrates through chemical bath deposition (CBD) followed by a thermal treatment process under a NH3 ambient. Hall effect results indicated the formation of p-type porous Bi2O3 NPTFs, and the best conductivity was achieved by N-doping with a higher carrier concentration, a lower resistivity, and an extremely close mobility compared with the undoped one. Mott-Schottky measurements further confirmed the p-type conductivity. The characteristics of optical and photoelectrochemical curves demonstrated that the N-doped porous Bi2O3 NPTFs were p-type with a smaller bandgap than the undoped n-type one, and the highest photocurrent density could reach 50 mu A/cm(2) under the light intensity kept at 30 mW/cm(2). Thus N-doped p-type porous Bi2O3 NPTFs are promising candidates for photoelectrochemical applications. (C) 2017 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?