Electrical Control Of Exchange Bias Via Oxygen Migration Across Coo-Zno Nanocomposite Barrier

Qinghao Li,Shishen Yan,Jie Xu,Shandong Li,Guoxia Zhao,Yunze Long,T. T. Shen,Kun Zhang,Juren Zhang
DOI: https://doi.org/10.1063/1.4972962
IF: 4
2016-01-01
Applied Physics Letters
Abstract:We proposed a nanocomposite barrier CoO-ZnO for magnetism manipulation in Co/CoO-ZnO/Ag heterojunctions. Both electrical control of magnetism and resistive switching were realized in this junction. An electrical tunable exchange bias of CoO1-v (v denotes O vacancies) on Co films was realized using voltages below 1 volt. The magnetism modulation associated with resistive switching can be attributed to the oxygen ions migration between the insulating CoO1-v layer and the semiconductive ZnO1-v layer, which can cause both ferromagnetic phase and resistance switching of CoO1-v layer. Published by AIP Publishing.
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