Strain Manipulation of Hybrid Graphene-Microfiber Waveguide

Jin-hui Chen,Fei Xu

DOI: https://doi.org/10.1364/fio.2016.jth2a.46

2016-01-01

Abstract:Here the strain characteristics of a hybrid graphene-microfiber waveguide structure is first investigated. By in-line loading strain, we can achieve modulating transmission of the device as high as 30% with ~5% strain. The platform may shed light on all-in fiber tuning graphene’s optical conductivity.

What problem does this paper attempt to address?

Mechanical Modulation of A Hybrid Graphene-Microfiber Structure

Jin-Hui Chen,Wei Luo,Zhao-Xian Chen,Shao-Cheng Yan,Fei Xu,Yan-Qing Lu

DOI: https://doi.org/10.1002/adom.201500680

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:Recently, the strain engineering of two-dimensional materials such as graphene has attracted considerable attention for its great potential in functional nanodevices. Here, we theoretically and experimentally investigate the strain manipulation of a graphene-integrated microfiber system for the first time. We analyze the influential factors of strain tuning, i.e., the geometrical parameters of the microfiber, the strain magnitude, and the probe-light wavelength. Moreover, we experimentally achieve in-line modulation as high as 30% with a moderate strain of ~5%, which is two orders of magnitude larger than previous results. The dynamic vibration response is also researched. The broadband, polarization-independent, cost-effective, strain-based modulator may find applications in low-speed modulation and strain sensing. Further, we believe that our platform may allow for all-in fiber engineering of graphene-analogue materials and provide new ideas for graphene-integrated flexible device design.
Tuning the Graphene Work Function by Uniaxial Strain

Xin He,Ning Tang,Xiaoxiao Sun,Lin Gan,Fen Ke,Tao Wang,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/1.4906995

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Forming good metal/graphene contact is of significance in making graphene devices, while tuning the graphene work function is a valid approach to decrease the contact barrier and then achieve electrodes with low contact resistance. A strain device has been fabricated to apply uniaxial strain to graphene grown by chemical vapor deposition method, and Kelvin probe force microscopy was used to measure the work function of the graphene under strain. The work function of the graphene is found to increase as strain increases. By applying a uniaxial strain of 7%, the work function can be adjusted as large as 0.161 eV. Such a result can be explained by strain induced increase of the density of states in graphene.
Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Guang-Xin Ni,Hong-Zhi Yang,Wei Ji,Seung-Jae Baeck,Chee-Tat Toh,Jong-Hyun Ahn,Vitor M. Pereira,Barbaros Özyilmaz

DOI: https://doi.org/10.1002/adma.201304156

2013-12-30

Abstract:Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, and portable electronic displays, where its intrinsically metallic, optically transparent, and mechanically robust nature are major advantages. Given that the intrinsic transparency of a graphene monolayer is 97.7 %, any small, reproducible, controllable, and potentially reversible modulation of transparency can have a significant impact for graphene as a viable transparent conducting electrode. Even more so, if the degree of modulation is polarization dependent. Here we show that the transparency in the visible range of graphene pre-strained on a Polyethylene terephthalate (PET) substrate exhibits a periodic modulation (0.1 %) as a function of polarization direction, which we interpret as strain-induced optical anisotropy. The degree of anisotropy is varied by reversible external manipulation of the level of pre-strain. The magnitude of strain is monitored independently by optical absorption and Raman spectroscopy, and the experimental observations are consistent with the theoretically expected modification of the optical conductivity of graphene arising from the strain-induced changes in the electronic dispersion of graphene. The strain sensitivity of the optical response of graphene demonstrated in this study can be potentially utilized towards novel ultra-thin optical devices and strain sensing applications.

Mesoscale and Nanoscale Physics
Probing Strain-Tunable Guided Modes in Graphene Waveguide by Photon-Assisted Tunneling

Yunhua Wang,Yulan Liu,Biao Wang

DOI: https://doi.org/10.7567/apex.6.065102

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:Strain effect on guided modes and electron transmission through the strained graphene waveguide with oscillating potential are explored theoretically. It is found that the guided mode in the waveguide can be controlled by zigzag or armchair direction strain. The transmission spectrum obtained displays a sharply asymmetric tunneling peak, where the energy difference between the tunneling peak and guided mode is equal to the photon induced by the oscillating potential. In view of the quantitative relationship, we propose the photon-assisted tunneling to probe the strain-tunable guided modes. (C) 2013 The Japan Society of Applied Physics
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap

Opening Zhen Hua Ni,Ting Yu,Yun Hao Lu,Ying Ying Wang,Yuan Ping Feng,Ze Xiang Shen

2008-01-01

Abstract:Graphene was deposited on a transparent andflexible substrate, and tensile strain up to0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (27.8 and14.2 cm1per 1% strain, respectively) because of the elongation of the carboncarbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposedthat,byapplyinguniaxialstrainongraphene,tunablebandgapatKpointcanberealized.First-principle calculations predicted a band-gap opening of300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover,ourresultssuggestthattheflexiblesubstrateisreadyforsuchastrainprocess,andRamanspectroscopy can be used as an ultrasensitive method to determine the strain.
Shear Strain Induced Modulation to the Transport Properties of Graphene

Xin He,Li Gao,Ning Tang,Junxi Duan,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/1.4894082

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Applying shear strain has been considered as a hopeful method to open a band gap of graphene. To study the transport properties of graphene under shear strain, a device was fabricated to apply shear strain, up to 16.7%, to graphene grown by chemical vapor deposition method. A top gate with ionic liquid as the dielectric material was used to tune the carrier density. The conductance of the Dirac point and carrier mobility is found to increase with a comparatively small increasing strain but then decrease with a larger one. Such a behavior might be related to several factors: the wrinkles, the transverse conducting channels, and the grain boundaries of graphene. Our study is helpful to further understand the strain engineering in graphene.
Strain Engineering Water Transport in Graphene Nanochannels.

Wei Xiong,Jefferson Zhe Liu,Ming Ma,Zhiping Xu,John Sheridan,Quanshui Zheng

DOI: https://doi.org/10.1103/physreve.84.056329

2011-01-01

Abstract:Using equilibrium and nonequilibrium molecular dynamic simulations, we found that engineering the strain on the graphene planes forming a channel can drastically change the interfacial friction of water transport through it. There is a sixfold change of interfacial friction stress when the strain changes from -10% to 10%. Stretching the graphene walls increases the interfacial shear stress, while compressing the graphene walls reduces it. Detailed analysis of the molecular structure reveals the essential roles of the interfacial potential energy barrier and the structural commensurateness between the solid walls and the first water layer. Our results suggest that the strain engineering is an effective way of controlling the water transport inside nanochannels. The resulting quantitative relations between shear stress and slip velocity and the understanding of the molecular mechanisms will be invaluable in designing graphene nanochannel devices.
Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Qiang Jin,Xibin Li,Junfan Chen,Shiming Gao

DOI: https://doi.org/10.1038/s41598-017-12554-6

IF: 4.6

2017-01-01

Scientific Reports

Abstract:A graphene-silicon hybrid waveguide with a dielectric spacer is proposed to enhance the nonlinear response in ultra-wide wavelength range by applying graphene's broadband highly nonlinear optical properties. The chemical potential of the graphene layer is tuned to satisfy the resonance condition and hence a low propagation loss is obtained. The dielectric spacer is used for avoiding additional free-carrier-absorption loss due to carrier interchange between the silicon core and the graphene layer. Aiming at the special waveguide structure with ultra-thin graphene layer, a full-vectorial theoretical model is developed to analyze its nonlinear properties. The waveguide dimensions are optimized in terms of the nonlinear parameter. The proposed hybrid waveguide exhibits high nonlinearity enhancement in an ultra-broad wavelength region covering near-infrared and mid-infrared bands. The conversion efficiency for a degenerate four-wave mixing process reaches -18.5 dB only with a pump power of 0.5 W and a waveguide length of tens of microns. In the wavelength range of 1.3-2.3 μm, the conversion efficiency can be kept stable by adopting suitable waveguide geometry and length. The corresponding 3-dB bandwidth can reach 40-110 nm for each fixed pump. The graphene-silicon hybrid waveguide has the potential to support chip-scale nonlinear applications in both near- and mid-infrared bands.
Strain-Modulated Graphene Heterostructure as a Valleytronic Current Switch

Maverick Chauwin,Zhuo Bin Siu,Mansoor Bin Abdul Jalil

DOI: https://doi.org/10.48550/arXiv.2108.10620

2021-08-24

Abstract:Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that incorporates strain-induced effects that have been neglected hitherto, such as the distortion of the unit cell under strain, the effect of strain on the next-nearest neighbor coupling, and the second-order contributions of the strain tensor. We derive the corresponding low-energy effective Hamiltonian about the Dirac points and reformulate the boundary conditions at the interfaces between strained and unstrained graphene in light of additional terms in the Hamiltonian. By applying these boundary conditions, we evaluate the transmission across a strained graphene heterostructure consisting of a central segment sandwiched between two unstrained leads. Modulation of the transmitted current can be effected by varying the magnitude and direction of the applied strain, as well as by the applying a gate voltage. Based on realistic parameter values, we predict that high ON-OFF ratios of up to $10^{12}$ as well as high current valley polarization can be achieved in the strain-modulated device.

Mesoscale and Nanoscale Physics
Electrical Tuning of Surface Plasmon Polariton Propagation in Graphene-Nanowire Hybrid Structure.

Haoliang Qian,Yaoguang Ma,Qing Yang,Bigeng Chen,Ying Liu,Xin Guo,Shisheng Lin,Jili Ruan,Xu Liu,Limin Tong,Zhong Lin Wang

DOI: https://doi.org/10.1021/nn406221s

IF: 17.1

2014-01-01

ACS Nano

Abstract:We demonstrate a dynamic surface plasmonic modulation based on graphene-nanowire (grapheme-NW) hybrid structures in the visible light range. A static modulation depth of as high as 0.07 dB/μm has been achieved experimentally. Through careful simulation and systematical experimental investigation, we found that the dual-confinement effect of charge density and electromagnetic energy around the vicinity of the NW will dramatically enhance the light-matter interaction and increase the Fermi level shifting, which are the key roles for bringing the optical response of the device to the visible range. The carrier concentration near the vicinity of a Ag NW is estimated to reach 0.921×10(14) cm(-2) after applying more than 25 V voltages, which is enough to shift the Fermi level for visible light. Furthermore, the modulation behaviors near the Dirac point of monolayer graphene and the singularity of gap-induced bilayer graphene are investigated. Calculated optical conductivity as a function of Fermi level predicts a minimum value near the Dirac point, which is consistent with the experimental results.
Strain-tunable synthetic gauge fields in topological photonic graphene

Zhen-Ting Huang,Kuo-Bin Hong,Ray-Kuang Lee,Laura Pilozzi,Claudio Conti,Jhih-Sheng Wu,Tien-Chang Lu

DOI: https://doi.org/10.48550/arXiv.2110.10050

2021-10-19

Abstract:We propose a straightforward and effective approach to design, by strain-engineering, photonic topological insulators supporting high quality factors edge states. Chiral strain-engineering creates opposite synthetic gauge fields in two domains resulting in Landau levels with the same energy spacing but different topological numbers. The boundary of the two topological domains hosts robust time-reversal and spin-momentum-locked edge states, exhibiting high quality factors due to continuous strain modulation. By shaping the synthetic gauge field, we obtain a remarkable field confinement and tunability, with the strain strongly affecting the degree of localization of the edge states. Notably the two-domain design stabilizes the strain-induced topological edge state. The large potential bandwidth of the strain-engineering and the opportunity to induce the mechanical stress at the fabrication stage enables large scalability for many potential applications in photonics, such as tunable microcavities, new lasers and information processing devices, including the quantum regime.

Optics,Mesoscale and Nanoscale Physics
Tailoring mechanically-tunable strain fields in graphene

M. Goldsche,J. Sonntag,T. Khodkov,G. Verbiest,S. Reichardt,C. Neumann,T. Ouaj,N. von den Driesch,D. Buca,C. Stampfer

DOI: https://doi.org/10.1021/acs.nanolett.7b04774

2017-11-13

Abstract:There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$\mu$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Zhaoyu Liu,Xuetao Ma,John Cenker,Jiaqi Cai,Zaiyao Fei,Paul Malinowski,Joshua Mutch,Yuzhou Zhao,Kyle Hwangbo,Zhong Lin,Arnab Manna,Jihui Yang,David Cobden,Xiaodong Xu,Matthew Yankowitz,Jiun-Haw Chu

2024-05-24

Abstract:Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.

Instrumentation and Detectors,Mesoscale and Nanoscale Physics,Other Condensed Matter
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Zhiwei Peng,Xiaolin Chen,Yulong Fan,David J. Srolovitz,Dangyuan Lei

DOI: https://doi.org/10.1038/s41377-020-00421-5

2020-11-23

Light: Science and Applications

Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) and graphene compose a new family of crystalline materials with atomic thicknesses and exotic mechanical, electronic, and optical properties. Due to their inherent exceptional mechanical flexibility and strength, these 2D materials provide an ideal platform for strain engineering, enabling versatile modulation and significant enhancement of their optical properties. For instance, recent theoretical and experimental investigations have demonstrated flexible control over their electronic states via application of external strains, such as uniaxial strain and biaxial strain. Meanwhile, many nondestructive optical measurement methods, typically including absorption, reflectance, photoluminescence, and Raman spectroscopies, can be readily exploited to quantitatively determine strain-engineered optical properties. This review begins with an introduction to the macroscopic theory of crystal elasticity and microscopic effective low-energy Hamiltonians coupled with strain fields, and then summarizes recent advances in strain-induced optical responses of 2D TMDCs and graphene, followed by the strain engineering techniques. It concludes with exciting applications associated with strained 2D materials, discussions on existing open questions, and an outlook on this intriguing emerging field.
Valley-dependent Transport in Strain Engineering Graphene Heterojunctions

Fei Wan,X. R. Wang,L. H. Liao,J. Y. Zhang,M. N. Chen,G. H. Zhou,Z. B. Siu,Mansoor B. A. Jalil,Yuan Li

DOI: https://doi.org/10.1088/1674-1056/ac5613

2022-01-01

Chinese Physics B

Abstract:We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions.It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K’ separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies,which can be exploited for graphene-based valleytronics devices.
On-Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon-Phonon Interaction in Graphene

Lu Wang,Ziao Tian,Biran Zhang,Borui Xu,Tianbo Wang,Yang Wang,Shilong Li,Zengfeng Di,YongFeng Mei

DOI: https://doi.org/10.1002/smll.201805477

IF: 13.3

2019-01-01

Small

Abstract:On-chip strain engineering is highly demanded in 2D materials as an effective route for tuning their extraordinary properties and integrating consistent functionalities toward various applications. Herein, rolling technique is proposed for strain engineering in monolayer graphene grown on a germanium substrate, where compressive or tensile strain could be acquired, depending on the designed layer stressors. Unusual compressive strains up to 0.30% are achieved in the rolled-up graphene tubular structures. The subsequent phonon hardening under compressive loading is observed through strain-induced Raman G band splitting, while distinct blueshifts of characteristic peaks (G+ , G- , or 2D) can be well regulated on an asymmetric tubular structure with a strain variation. In addition, due to the strong confinement of the local electromagnetic field under 3D tubular geometry, the photon-phonon interaction is highly strengthened, and thus, the Raman scattering of graphene in rolled-up tubes is enhanced. Such an on-chip rolling approach leads to a superior strain tuning method in 2D materials and could improve their light-matter interaction in a tubular configuration, which may hold great capability in 2D materials integration for on-chip applications such as in mechanics, electronics, and photonics.
Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

Paul Froeter,Parsian Moseni,Apratim Khandelwal,Xiuling Li

DOI: https://doi.org/10.48550/arXiv.2206.01650

2022-06-03

Abstract:Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile strength provide a lot of room for strain engineering. Here we use the self-rolled-up membrane platform for strain engineering and integration of graphene with stressed dielectric thin films. Graphene rolls up or down together with the stressed film upon releasing from the substrate and the curvature of the rolled-up film stack enables the strain tuning of the graphene monolayer. Raman spectroscopy was used to characterize the uniaxial strain in rolled up graphene by quantifying the red shift and splitting of the G peak in the doubly degenerate E2g optical mode. Approximately 5 percent compressive strain is realized using a SRuM diameter of roughly 2 microns. By reducing the diameter of the SRuM structure, even higher strain level can be reached. The SRuM approach can also be readily applied to induce strain in other materials beyond the level that can be achieved using conventional approaches.

Mesoscale and Nanoscale Physics
Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Yue Zhang,M. Hossain,A. M. van der Zande

DOI: https://doi.org/10.1117/12.2567539

2020-08-20

Abstract:Inhomogeneous and three-dimensional strain engineering in two dimensional materials opens up new avenues to straintronic devices for control strain sensitive photonic properties. Here we present a method to tune strain by wrinkling monolayer WSe2 attached to a 15 nm thick ALD support layer and compressing the heterostructure on a soft substrate. The ALD film stiffens the 2D material, enabling optically resolvable micron scale wrinkling rather than nanometer scale crumpling and folding. Using photoluminescence spectroscopy, we show the wrinkling introduces periodic modulation of the bandgap by 47 meV, corresponding with strain modulation from +0.67% tensile strain at the wrinkle crest to -0.31% compressive strain at the trough. Moreover, we show that cycling the substrate strain mechanically reconfigures the magnitude and direction of wrinkling and resulting band tuning. These results pave the way towards stretchable multifuctional devices based on strained 2D materials.

Materials Science,Physics,Engineering
Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View

Yingjie Zhang,Mohammad Heiranian,Blanka Janicek,Zoe Budrikis,Stefano Zapperi,Pinshane Y. Huang,Harley T. Johnson,Narayana R. Aluru,Joseph W. Lyding,Nadya Mason

DOI: https://doi.org/10.1021/acs.nanolett.8b00273

2018-03-05

Abstract:Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene, theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.

Mesoscale and Nanoscale Physics
High-Harmonic Generation from Engineered Graphene for Polarization Tailoring

Navdeep Rana,M. S. Mrudul,Gopal Dixit

2024-02-04

Abstract:Strain engineering is a versatile method to boost the carrier mobility of two-dimensional materials-based electronics and optoelectronic devices. In addition, strain is ubiquitous during device fabrication via material deposition on a substrate with a different lattice structure. Here, we show that the polarization properties of the harmonics in graphene under uniaxial strain are strongly yet differently affected in the lower and higher orders. The polarization plane of the lower-order emitted harmonics is rotated -- a manifestation of Faraday rotation due to the broken symmetry planes. In contrast, we observe elliptically-polarized higher-order harmonics due to the intricate interplay of the interband and intraband electron dynamics. The implications of these findings are twofold: First, we show how the rotation of the polarization plane of the lower-order harmonics can be used as a probe to characterize the strain's nature, strength, and angle. Second, we demonstrate how strain engineering can be used to alter the polarization properties of higher-order harmonics, relevant for applications in ultrafast chiral-sensitive studies. Our research opens a promising avenue for strain-tailored polarization properties of higher-order harmonics in engineered solids.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons,Optics

Strain Manipulation of Hybrid Graphene-Microfiber Waveguide

Mechanical Modulation of A Hybrid Graphene-Microfiber Structure

Tuning the Graphene Work Function by Uniaxial Strain

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Probing Strain-Tunable Guided Modes in Graphene Waveguide by Photon-Assisted Tunneling

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap

Shear Strain Induced Modulation to the Transport Properties of Graphene

Strain Engineering Water Transport in Graphene Nanochannels.

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Strain-Modulated Graphene Heterostructure as a Valleytronic Current Switch

Electrical Tuning of Surface Plasmon Polariton Propagation in Graphene-Nanowire Hybrid Structure.

Strain-tunable synthetic gauge fields in topological photonic graphene

Tailoring mechanically-tunable strain fields in graphene

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Valley-dependent Transport in Strain Engineering Graphene Heterojunctions

On-Chip Rolling Design for Controllable Strain Engineering and Enhanced Photon-Phonon Interaction in Graphene

Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

Strain engineering photonic properties in monolayer semiconductors through mechanically-reconfigurable wrinkling

Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View

High-Harmonic Generation from Engineered Graphene for Polarization Tailoring