Abstract:The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiNx nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al0.45Ga0.55N layers as the functions of SiNx interlayer growth time, the surface coverage fraction of SiNx is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocation density on the surface coverage fraction of SiNx nanomask supports the very different growth models of Al-rich AlGaN on SiNx interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiNx nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiNx covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiNx and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al0.45Ga0.55N islands on the openings towards the regions covered by SiNx, relaxing the compressive strain and bending the dislocations at the same time. (C) 2014 AIP Publishing LLC.

Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition*

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Defect Reduction In Si-Doped Al0.45ga0.55n Films By Sinx Interlayer Method

Defect reduction in Si-doped Al {sub 0.45} Ga {sub 0.55} N films by SiN {sub x} interlayer method

Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Structural Properties of In0.53Ga0.47As Epitaxial Films Grown on Si (111) Substrates by Molecular Beam Epitaxy

Modified Dislocation Filter Method: Toward Growth of GaAs on Si by Metal Organic Chemical Vapor Deposition

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Quality-enhanced In0.3Ga0.7As Film Grown on GaAs Substrate with an Ultrathin Amorphous In0.6Ga0.4As Buffer Layer

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer

Defect Reduction in Gan Epilayers Grown by Metal-Organic Chemical Vapor Deposition with in Situ Sinx Nanonetwork

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Reducing the Critical Thickness of Epitaxial Ag Film on the Si(111) Substrate by Introducing a Monolayer Al Buffer Layer

Growth of InxGa1−xAs Films on GaAs (100): Inserting an Ultrathin InxGa1−xAs Buffer Using a Surface Technology

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

Effects of In 0 . 82 Ga 0 . 18 As / InP Double Buffers Design on the Microstructure of the In 0 . 82 G 0 . 18 As / InP Heterostructure

Design of InxGa1−xAs Buffer Layers for Epitaxial Growth of High-Quality In0.3Ga0.7As Films on GaAs Substrates

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD