Abstract:Through silicon via (TSV) is an emerging technology enabling three dimensional (3D) packaging through vertical interconnection between multiple chips, which can significantly increase I/O per unit area, reduce electrical resistance as well as RC delay, and miniaturize the solder interconnects. However, it can also dramatically increase the current density and thermal energy density in each interconnect meanwhile. Thus, the reliability of miniaturized interconnects should be paid more attention. In this study, the influence of geometry of microbump interconnects, in terms of standoff height (h) and contact angle (θ), on thermal stress and fatigue life of interconnects in TSV structures under thermal cycling loading conditions was investigated by finite element (FE) method. Simulation results show that high thermal stress (herein, the equivalent stress) zones locate at Cu/Si interfaces and microbump interconnects. Considering that interconnects are the weakest part in the packaging system, their thermal stress and thermal fatigue behaviors were further investigated, and results reveal that the microbump interconnects in the lower microbump interconnect array are more vulnerable compared with that in upper arrays, and the outmost microbump interconnects in each interconnect array are most dangerous during the thermal cycling load. Furthermore, the influences of both h and θ on the fatigue life of the dangerous microbumps were calculated by using the modified Darveaux's energy based method. Calculation results reveal that increasing decreasing h and increasing θ improve the fatigue life of microbump interconnects. Besides, the thermal stress has no necessary connection with fatigue life, whereas the thermal strain (which is influenced by the thermal stress, structure factors and triaxial stress state) is closely related to the plastic strain energy and should be taken into account in evaluation of fatigue life of solder microbump interconnects in TSV structures.

Finite Element Simulation Of The Size Effect On Thermal Fatigue Behavior Of Solder Bump Joints In Tsv Structure

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Influence of Geometry of Microbump Interconnects on Thermal Stress and Fatigue Life of Interconnects in Copper Filled Through Silicon Via Structure

Three-dimensional Simulation of the Effects of Cu Protrusion of Cu-filled TSVs on Thermal Fatigue Behavior of Micro-Bump Joints in 3D Integration

Effect of Thermal Cycling on the Strain and Stress Distribution of TSVs and Solder Bumps in Stacked Package Structure

Thermal Fatigue Analysis of Microbumps in a 3D TSV Integration Device

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Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

Fatigue behaviour analysis of thermal cyclic loading for through-silicon via structures based on backstress stored energy density

Reliability Prediction Of Different Size Solder Bumps In Thermal Shock Test Using Fem

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Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Three-Dimensional Simulation of the Thermo-Mechanical Interaction Between the Micro-Bump Joints and Cu Protrusion in Cu-Filled TSVs of the High Bandwidth Memory (HBM) Structure

Thermal Fatigue Modelling and Simulation of Flip Chip Component Solder Joints under Cyclic Thermal Loading

Three-dimensional Simulation of Effects of Electro-Thermo-Mechanical Multi-physical Fields on Cu Protrusion and Performance of Micro-bump Joints in TSVs Based High Bandwidth Memory (HBM) Structures

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Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

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Fatigue Behavior of 3D Stacked Packaging Structures under Extreme Thermal Cycling Condition

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Copper Filled Through Silicon Vias Using Coupled Phase Field and Finite Element Methods

Solder Joint Geometry Effects on Thermomechanical Fatigue Lifetime of End-Capped Chip Component Assemblies