Abstract:Through silicon via (TSV) is an emerging technology enabling three dimensional (3D) packaging through vertical interconnection between multiple chips, which can significantly increase I/O per unit area, reduce electrical resistance as well as RC delay, and miniaturize the solder interconnects. However, it can also dramatically increase the current density and thermal energy density in each interconnect meanwhile. Thus, the reliability of miniaturized interconnects should be paid more attention. In this study, the influence of geometry of microbump interconnects, in terms of standoff height (h) and contact angle (θ), on thermal stress and fatigue life of interconnects in TSV structures under thermal cycling loading conditions was investigated by finite element (FE) method. Simulation results show that high thermal stress (herein, the equivalent stress) zones locate at Cu/Si interfaces and microbump interconnects. Considering that interconnects are the weakest part in the packaging system, their thermal stress and thermal fatigue behaviors were further investigated, and results reveal that the microbump interconnects in the lower microbump interconnect array are more vulnerable compared with that in upper arrays, and the outmost microbump interconnects in each interconnect array are most dangerous during the thermal cycling load. Furthermore, the influences of both h and θ on the fatigue life of the dangerous microbumps were calculated by using the modified Darveaux's energy based method. Calculation results reveal that increasing decreasing h and increasing θ improve the fatigue life of microbump interconnects. Besides, the thermal stress has no necessary connection with fatigue life, whereas the thermal strain (which is influenced by the thermal stress, structure factors and triaxial stress state) is closely related to the plastic strain energy and should be taken into account in evaluation of fatigue life of solder microbump interconnects in TSV structures.

Three-dimensional Simulation of Effects of Electro-Thermo-Mechanical Multi-physical Fields on Cu Protrusion and Performance of Micro-bump Joints in TSVs Based High Bandwidth Memory (HBM) Structures

Three-Dimensional Simulation of the Thermo-Mechanical Interaction Between the Micro-Bump Joints and Cu Protrusion in Cu-Filled TSVs of the High Bandwidth Memory (HBM) Structure

Three-dimensional Simulation of the Effects of Cu Protrusion of Cu-filled TSVs on Thermal Fatigue Behavior of Micro-Bump Joints in 3D Integration

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Cu-filled Through Silicon Vias (tsvs) Using Combined Monte Carlo and Finite Element Method

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

Finite Element Simulation Of The Size Effect On Thermal Fatigue Behavior Of Solder Bump Joints In Tsv Structure

Thermal Fatigue Analysis of Microbumps in a 3D TSV Integration Device

Three-dimensional Simulation of Effects of Microstructure Evolution and Interfacial Delamination on Cu Protrusion in Copper Filled Through Silicon Vias by Combined Monte Carlo and Finite Element Methods

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

3D Finite Element Simulation Study of Chip Stacking Structure Considering Different Numbers of Stacked Dies and the Effects of Underfill and Intermetallic Compound Layer of Micro joints

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Copper Filled Through Silicon Vias Using Coupled Phase Field and Finite Element Methods

Modeling of electromigration of the through silicon via interconnects

Influence of Geometry of Microbump Interconnects on Thermal Stress and Fatigue Life of Interconnects in Copper Filled Through Silicon Via Structure

Simulation on TSV Protrusion from Atomic to Micron Scales

System-Level Analysis of 3D ICs with Thermal TSVs

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Interaction Effects Between the Preferred Growth of Β-Sn Grains and Thermo-Mechanical Response in Microbump Interconnects under Thermal Cycling