Abstract:Nano-laminates consisting of high-permittivity dielectrics and SiO2 have been extensively studied for radio frequency metal-insulator-metal (MIM) capacitors because of their superior voltage linearity and low leakage current. However, there are no reports on the capacitance-voltage (C-V) characteristics at a high sweep voltage range. In this work, an interesting variation in the voltage-dependent capacitance that forms a 'omega'-like shape is demonstrated for the MIM capacitors with Al2O3/ZrO2/SiO2 nano-laminates. As the thickness ratio of the SiO2 film to the total insulator increases to around 0.15, the C-V curve changes from an upward parabolic shape to a 'omega' shape. This can be explained based on the competition between the orientation polarization from SiO2 and the electrode polarization from Al2O3 and ZrO2. When the SiO2 film is very thin, the electrode polarization dominates in the MIM capacitor, generating a positive curvature C-V curve. When the thickness of SiO2 is increased, the orientation polarization is enhanced and thus both polarizations are operating in the MIM capacitors. This leads to the appearance of a multiple domain C-V curve containing positive and negative curvatures. Therefore, good consistency between the experimental results and the theoretical simulations is demonstrated. Such voltage-dependent capacitance behavior is not determined by the stack structure of the insulator, measurement frequency and oscillator voltage, but by the thickness ratio of the SiO2 film to the whole insulator. These findings are helpful to engineer MIM capacitors with good voltage linearity.

Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics

Investigation of Anomalous Hysteresis in Mos Devices with Zro2 Gate Dielectrics

Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-annealing

Capacitance-Voltage Characteristics Measured Through Pulse Technique on High-K Dielectric Mos Devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors

Hysteresis In Lanthanide Aluminum Oxides Observed By Fast Pulse Cv Measurement

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Anomalous Capacitance-Voltage Characteristics of Al/Al-Rich Al2o3/P-Si Capacitors and Their Reconstruction

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers