Preparation of AlN microspheres/UHMWPE composites for insulating thermal conductors

Yuan Wang,Xvsheng Qiao,Jun Wan,Yao Xiao,Xianping Fan
DOI: https://doi.org/10.1039/c6ra18228c
IF: 4.036
2016-01-01
RSC Advances
Abstract:AlN microspheres were prepared by applying both sol-gel technique and gas reduction nitridation, and then modified by 3-aminopropyltriethoxysilane (KH550) to increase the affinity with the polymer. The KH550 modified AlN microspheres/UHMWPE composites were fabricated by solution mixing and hot pressing technique. Their microstructure, thermal stability, thermal conductivity and dielectric properties were investigated. The AlN microspheres/UHMWPE composite demonstrated much higher thermal conductivity in comparison with the commercial AlN particles/UHMWPE composite. The dielectric constant and dielectric loss of the KH550 modified AlN microspheres/UHMWPE composites increased slightly with increasing AlN content. The KH550 modified AlN microspheres/UHMWPE composites still had a high surface resistivity (>10(14) Omega m) and volume resistivity (>10(15) Omega m).
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