Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

A Framework for Defects in PBTI and Hot Carrier Ageing

Impact of Electron Trapping on Energy Distribution Characterization of NBTI-Related Defects for Si P-Finfets

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Advanced Compact Modeling for Transistor Aging: Trap-based Approaches and Mixed-mode Coupling

Hot Carrier Aging and Its Variation under Use-Bias: Kinetics, Prediction, Impact on Vdd and Sram

Towards Understanding Interaction Between Hot Carrier Ageing and PBTI

Interaction Between Hot Carrier Aging and Pbti Degradation in Nmosfets: Characterization, Modelling and Lifetime Prediction

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Interface Trap Generation and Recovery Mechanisms During and after Positive Bias Stress in Metal-Oxide-semiconductor Structures

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale Nmosfets

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

Impact of Hot Carrier Aging on Random Telegraph Noise and Within A Device Fluctuation

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology