Abstract:In Part II of this article, we explore the effect of positive bias temperature instability (PBTI) aging on the retention time distribution. By combining TCAD simulations with experiments, we identified the spatial location and energy-level distribution of pre-existing and generated interface states. According to the defect-based compact leakage model established in Part I, simulations reveal the nonnegligible influence of PBTI aging effects on the retention time distribution. Additionally, the effects of buried-channel-array-transistors (BCATs) device parameters and random dopant fluctuation (RDF) on static leakage have been incorporated into the compact model, aiming to optimize the time-zero retention time of weak cells. Investigations focused on several key device parameters in the storage contact (SC) and wordline (WL) overlap region suggest that decreasing the work function (WF) of the top gate is a beneficial strategy. However, optimizing this key parameter will increase the degradation rate of the retention time of weak cells due to the PBTI-induced aging effect. Therefore, when designing aging-aware BCAT devices, tradeoffs need to be made between time-zero retention time, long-term retention time, and read/write performance.

Towards Understanding Interaction Between Hot Carrier Ageing and PBTI

Interaction Between Hot Carrier Aging and Pbti Degradation in Nmosfets: Characterization, Modelling and Lifetime Prediction

A Framework for Defects in PBTI and Hot Carrier Ageing

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Hot Carrier Aging and Its Variation under Use-Bias: Kinetics, Prediction, Impact on Vdd and Sram

Physically Based Analysis of Hot Carrier Induced Degradation in InP/InGaAs Double Heterojunction Bipolar Transistors

Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Model of NBTI combined with mobility degradation

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Hot Carrier Aging of Nano-Meter Devices

Impact of BTI Aging Effect on Soft Error Rate of Combination Circuit

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

Impact of Hot Carrier Aging on Random Telegraph Noise and Within A Device Fluctuation

Hot Carrier Aging of Nano-Scale Devices: Characterization Method, Statistical Variation, and Their Impact on Use Voltage.

As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI)

Body Bias Dependence Of Hot Carrier Degradation (Hcd) In Advanced Finfet Technology