Abstract:With the development of the semiconductor manufacturing process, the size of the metal-oxide-semiconductor field-effect transistor (MOSFET) device has been on a tens-of-nanometer scale. The shot noise appears in the excess channel noise of the device, and the noise mechanism of the device begins to change gradually. Due to the fact that the electron temperature gradient is neglected in calculation and the significant enhancement of the lateral channel electric field are not taken into consideration, the traditional electron temperature model and the thermal noise model underestimate the effect of hot carrier effects, resulting in the underestimate of the thermal noise. Moreover, the traditional drain-source current model ignores the electron temperature gradient in the calculation and does not include the effect of the electron temperature on the mobility degradation effect either. Therefore, the calculation accuracy of the shot noise and the Fano factor on the basis of the traditional model will be reduced to a certain extent as the size of the device decreases, thus affecting the analysis of the noise mechanism of the device. In this paper, we establish the channel electron temperature model and the electron velocity model by solving the energy balance equation, and develop the drain source current model based on these two models. Moreover, the shot noise model and the thermal noise model suitable for devices below 40 nm are established based on the drain-source current model. Meanwhile, the Fano factor of the shot noise is calculated. The influence of the MOSFET device size on the noise mechanism and the Fano factor of the shot noise are also investigated when the device is under different bias voltages. The results show that the accuracy of the existing thermal noise model and the shot noise model decline as the device size decreases, which eventually leads the Fano factor of the shot noise to be overestimated. When the size of the NMOSFET device is below 20 nm, the shot noise affects the device noise in the strong inversion region. With the size decreasing, the characteristic of the noise mechanism of the NMOSFET device changes from the characteristic of single thermal noise to the common characteristic of both the thermal noise and the shot noise. When the NMOSFET device size is scaled down to 10 nm, the channel noise of the device can no longer be characterized by the thermal noise alone. Instead, the noise mechanism of the device changes and is characterized by both the channel thermal noise and the suppressed shot noise. The shot noise has become an important factor that contributes to the excessive noise in the device.

Low-frequency Noise Characteristics in the MOSFETs Processed in 65 Nm Technology

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Analysis of Channel Current Noise in Small Nanoscale Metal Oxide Semiconductor Field Effect Transistors

Low Frequency Noise Behaviors in the Partially Depleted Silicon-On-Insulator Device

Low-frequency noise in narrow channel MOSFETs

RF Noise of 65-Nm MOSFETs in the Weak-to-Moderate-Inversion Region

Observation of Nonconservation Characteristics of Radio Frequency Noise Mechanism of 40-Nm N-Mosfet

Behavior of Low-Frequency Noise in N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

Low-Frequency Noise Behavior in P-Channel Soi Finfets Processed with Different Strain Techniques

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Impact of the Device Scaling on the Low-Frequency Noise in N-Mosfets

Low-frequency noise in the Double SOI (DSOI) MOSFETs with back-gate control

Numerical modeling of RF noise in scaled MOS devices

Shot Noise Model of the Short Channel Metal-Oxide-semiconductor Field-Effect Transistor