Effect of Sputtering Pressure on the Physical Properties of Do Magnetron Sputtered Cadmium Oxide Films

TK Subratnanyam,GV Rao,KTR Reddy,S Uthanna
2003-01-01
Indian Journal of Engineering and Materials Sciences
Abstract:Polycrystalline thin films of cadmium oxide were prepared using do magnetron sputtering technique by sputtering of metallic cadmium target in the mixture of argon and oxygen atmosphere under various sputtering pressures in the range 3x10(-2)-1x10(-1) mbar. The variation of deposition rate of the films with the sputtering pressure was in correlation with the variation of cathode potential. The influence of sputtering pressure on the structural, electrical and optical properties of CdO films was systematically studied. The electrical resistivity of the films increased from 5.6x10(-4) to 1.5x10(-3); Stem and the optical band gap increased form 2.45 to 2.53 eV with the increase of sputtering pressure from 3x10(-2) to 1x10(-1) mbar respectively.
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