Influence of oxygen partial pressure on the physical behaviour of CdO films prepared by activated reactive evaporation

C. Sravani,K.T. Ramakrishna Reddy,P.Jayarama Reddy
DOI: https://doi.org/10.1016/0167-577X(93)90095-F
IF: 3
1993-01-01
Materials Letters
Abstract:Cadmium oxide thin films were prepared by evaporating cadmium in the presence of oxygen. The effects of varying the oxygen partial pressure on the physical properties were investigated. The films showed a cubic structure with (111) preferred orientation. All the films exhibited the n-type conductivity in the range of oxygen partial pressure used. The films evaporated under the optimum oxygen partial pressure of 1 × 10−3Torr exhibited a resistivity of 5.6 × 10−3Ω cm and a transmittance of about 90% in the visible region.
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