Solution-Processed Cu2sns3 Thin Film Solar Cells

Jianmin Li,Jianliu Huang,Yan Zhang,Yaguang Wang,Cong Xue,Guoshun Jiang,Weifeng Liu,Changfei Zhu

DOI: https://doi.org/10.1039/c6ra09389b

IF: 4.036

2016-01-01

RSC Advances

Abstract:Cu2SnS3as a promising candidate for the next generation of thin film solar cells still lacks of further understanding and study.

What problem does this paper attempt to address?

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Liang Wang,Bo Ye,Zhe Xia,Meiying Leng,Ying Zhou,Desheng Xue,Jie Zhong,Liang Gao,Haisheng Song,Jiang Tang

DOI: https://doi.org/10.1016/j.solmat.2015.08.016

2016-01-01

Abstract:Cu12Sb4S13 is a very potential non-toxic, earth-abundant absorber material for thin film solar cells yet its photovoltaic related properties are rarely explored so far. In this paper, we first developed a hydrazine solution process to fabricate phase-pure, highly crystalline, large grain Cu12Sb4S13 film and then carried out investigations to study the chemical, optical and electrical properties of Cu12Sb4S13 film in detail. Careful X-ray photoelectron spectroscopy (XPS) measurements indicated Cu12Sb4S13 could be oxidized into Cu3SbS4 in a sulfur rich atmosphere at elevated temperature, and the valance states of our Cu12Sb4S13 are determined as Cu+12Sb3+3Sb5+1S2−13 rather than the previously reported Cu+10Cu22+Sb3+4S2−13. Optical absorption investigation showed that Cu12Sb4S13 has a direct band gap of 1.47 eV. Ultraviolet photoelectron spectroscopy (UPS) study revealed that the conduction band and valence band are located at −3.52 eV and −4.99 eV relative to the vacuum level, respectively. Finally, we built a photodetector based on Cu12Sb4S13 film achieving 0.15 A/W responsivity and a heterojunction solar cell having 0.04% solar conversion efficiency. Our preliminary experimental study indicated that Cu12Sb4S13 may be a very attractive absorber material for photovoltaic application.
Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

Xia Sheng,Lei Wang,Ye Tian,Yeping Luo,Lantao Chang,Deren Yang

DOI: https://doi.org/10.1007/s10854-012-0824-4

2012-01-01

Journal of Materials Science Materials in Electronics

Abstract:A new and low-cost chemical method is used to fabricate Cu2ZnSnS4 (CZTS) thin films by annealing Cu–Sn metallic inks with spin-coating ZnO layers under H2S. The obtained pure phase and smooth CZTS thin films are characterized by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Further, the CZTS thin films are grown on n-type Si substrates to form proto-type CZTS/Si heterojunction solar cells that have photovoltaic properties, indicating the promising application of CZTS as the absorber layers in Si-based heterojunction solar cells.
Preparation and Characterization of Cuins2 Thin Films for Solar Cells by Chemical Bath Deposition

HX Tang,M Yan,H Zhang,XY Ma,L Wang,DR Yang

IF: 3.1

2005-01-01

Chemical Research in Chinese Universities

Abstract:Introduction Recent years, chalcopyrite semiconductors have been successfully applied as absorber layers for polycrystalline thin-film solar cells. Among the ternary compound semiconductors, CuInS2 thin films with a direct bandgap of about 1.50 eV and a large absorption coefficient in the range of 104-105cm-1[1] are one kind of the most promising optical absorbers for high efficiency thin film solar cells.To date, CuInS2-based solar cells have shown conversion efficiency of about 12. 5%[2]. They exhibit long-term stability without any signs of degradation.
Advances In Cu2znsn(S,Se)(4) Thin Film Solar Cells

Zhang Xue,Han Yang,Chai Shuang-Zhi,Hu Nan-Tao,Yang Zhi,Geng Hui-Juan,Wei Hao

DOI: https://doi.org/10.3866/PKU.WHXB201603073

2016-01-01

Acta Physico-Chimica Sinica

Abstract:CdTe and Cu(In,Ga)(S,Se)(2)(CIGSSe) light absorber materials have dominated the research field of compound semiconductor solar cells. Despite the high power conversion efficiencies and technological advances of CdTe and CIGS photovoltaic technologies, certain issues, like rare earth constituent elements or toxic elements, limit their future upscaled applications. In recent years, Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells have become research hotspots, drawing increased interest. With earth-abundant and environmentally benign constituent elements, CZTSSe light absorber materials are widely regarded as the next-generation photovoltaic technology that can replace CdTe and CIGS as a promising candidate for terawatt-level power output. In this review, the synthesis, structure, and properties of CZTSSe materials will be discussed. This review will primarily demonstrate the developments and recent advances of different fabrication techniques and deposition methods, such as vacuum-based and solution-based deposition methods, covering their advantages and disadvantages. Recent developments in CZTSSe fabrication methods and CZTSSe nanocrystal preparation approaches will also be reviewed. Finally, some limitations on CZTSSe photovoltaic technology will be analyzed, and directions for improvement will be suggested, helping scientists to make future developments in this field.
Solution-processed CuSbS 2 Solar Cells Based on Metal–organic Molecular Solution Precursors

Yafeng Xu,Qing Ye,Wenyong Chen,Xu Pan,Linhua Hu,Shangfeng Yang,Tasawar Hayat,Ahmed Alsaedi,Jun Zhu,Songyuan Dai

DOI: https://doi.org/10.1007/s10853-017-1663-8

IF: 4.5

2017-01-01

Journal of Materials Science

Abstract:Developing earth-abundant and low-toxic light absorber materials is crucial for next-generation photovoltaics. In this article, a simple solution-process method for the deposition of CuSbS2 thin film is presented. An equimolar mixture of Cu2O and Sb2O3 was dissolved in butyldithiocarbamic acid, forming a thermally degradable metal–organic molecular solution. Uniform and phase-pure CuSbS2 thin films can be obtained by spin coating this precursor solution followed by a fast annealing process in an inert gas environment. Preferential crystal growth of (111) lattice planes was observed in films prepared at annealing temperature of more than 290 °C. The films possess a direct band gap of 1.6 eV with high absorption coefficient. CuSbS2 planar heterojunction solar cells of FTO/CdS/CuSbS2/Au structure were assembled achieving a power conversion efficiency of 0.68% under one sun illumination. This metal–organic molecular solution precursor provides a simple method to fabricate multicomponent inorganic chalcogenide films for photovoltaic application.
Hydrazine Processed Cu2SnS3 Thin Film and Their Application for Photovoltaic Devices

Jun Han,Ying Zhou,Yang Tian,Ziheng Huang,Xiaohua Wang,Jie Zhong,Zhe Xia,Bo Yang,Haisheng Song,Jiang Tang

DOI: https://doi.org/10.1007/s12200-014-0389-3

2014-01-01

Frontiers of Optoelectronics

Abstract:Copper tin sulfide (Cu2SnS3) was a potential earth abundant absorber material for photovoltaic device application. In this contribution, triclinic Cu2SnS3 film with phase pure composition and large grain size was fabricated from a hydrazine solution process using Cu, Sn and S as the precursors. Absorption measurement revealed this Cu2SnS3 film had a direct optical band gap of 0.88 eV, and Hall effect measurement indicated the film was p-type with hole mobility of 0.86 cm2/Vs. Finally Mo/Cu2SnS3/CdS/ZnO/AZO/Au was produced and the best device efficiency achieved was 0.78%. Also, this device showed improved device performance during ambient storage. This study laid some foundation for the further improvement of Cu2SnS3 solar cell.
Progress in the Fabrication of Cu 2 ZnSnS 4 Thin Film for Solar Cells

yong fan,honglei qin,baoxiu mi,zhiqiang gao,wei huang

DOI: https://doi.org/10.6023/A14040259

2014-01-01

Acta Chimica Sinica

Abstract:Cu(In,Ga)Se-2 (CIGS) is a widely investigated material for thin film solar cells in the last decade. However, it has the concern of short availability of constituent elements (e.g. In, Ga) which limits its development. Research focused on new substitute of light absorber is eagerly needed. As an earth-abundant semiconductor, CZTS (Cu2ZnSnS4) has attracted considerable interest recently. CZTS has lots of similarities to CIGS, and is considered to be a promising material in the field of thin film solar cells owning to its fascinating optoelectronic properties, low-cost fabrication, and non-toxic nature. In this article, after introducing the features of CZTS material and the basic structure of CZTS thin film solar cells, different methods for the fabrication of CZTS thin films, as well as the corresponding device performance are discussed. CZTS thin film fabrication methods include vacuum based approaches and non-vacuum based approaches, with the former usually has the advantage of easy control of the chemical composition as well as good reproducibility; and the latter often has merits of low-cost, less-energy consumable, and suitable for large area deposition. Firstly, vacuum based approaches, including sputtering, evaporation and pulsed laser deposition, are discussed. Secondly, according to the different condition of the precursors, three subtypes of non-vacuum based approaches are presented (nanoparticle ink precursors, solution precursors, mixture precursors of solution and nanoparticle ink). Meanwhile, corresponding device efficiencies are summarized. Up to date, the power conversion efficiencies of 12.6% for CZTS based solar cells have been achieved, which is enormously encouraging. The new champion device was fabricated using a recently described hydrazine pure-solution approach, which significantly improves the coating uniformity and film structure. What's more, various film treatment strategies to optimize the CZTS thin film, such as selenization/sulfurization and elemental composition tuning (e.g. S/Se, Zn/Cu), are outlined here; the focus of future research and development are proposed.
Kesterite Thin‐Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4

Aron Walsh,Shiyou Chen,Su-Huai Wei,Xin-Gao Gong

DOI: https://doi.org/10.1002/aenm.201100630

IF: 27.8

2012-01-01

Advanced Energy Materials

Abstract:Quaternary semiconducting materials based on the kesterite (A2BCX4) mineral structure are the most promising candidates to overtake the current generation of light-absorbing materials for thin-film solar cells. Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and their alloy Cu2ZnSn(Se,S)4 consist of abundant, low-cost and non-toxic elements, unlike current CdTe and Cu(In,Ga)Se2 based technologies. Zinc-blende related structures are formed by quaternary compounds, but the complexity associated with the multi-component system introduces difficulties in material growth, characterization, and application. First-principles electronic structure simulations, performed over the past five years, that address the structural, electronic, and defect properties of this family of compounds are reviewed. Initial predictions of the bandgaps and crystal structures have recently been verified experimentally. The calculations highlight the role of atomic disorder on the cation sub-lattice, as well as phase separation of Cu2ZnSnS4 into ZnS and CuSnS3, on the material performance for light-to-electricity conversion in photovoltaic devices. Finally, the current grand challenges for materials modeling of thin-film solar cells are highlighted.
A promising photovoltaic material Cu2MnSn(S,Se)4: Film growth and its application in solar cell

Yali Sun,Xiuling Li,Weiliang Qiao,Li Wu,Shoushuai Gao,Hui Li,Fangfang Liu,Jianping Ao,Yi Zhang

DOI: https://doi.org/10.1016/j.solmat.2020.110788

IF: 6.9

2021-01-01

Solar Energy Materials and Solar Cells

Abstract:Chalcogenides, such as CdTe, Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4, have made significant progress in their thin-film photovoltaic performance, but the toxicity (CdTe) and scarcity (Cu(In,Ga)(S,Se)2) of the constituent elements, as well as the inevitable anti-site disorder (Cu2ZnSn(S,Se)4), limit the further improvement of efficiency. In this work, a new thin-film absorber, Cu2MnSn(S,Se)4, is studied in terms of both film growth and characterization. We prepare the precursor film by the sol-gel method followed by selenization at high temperature. The absorbance of the precursor film is higher than 98% at wavelengths of 200–1300 nm. The crystallinity and the phase transformation of the prepared film can be tailored greatly by modifying the selenization process. When the selenization temperature is 570 °C and the selenization time is 30 min, a highly-crystalline, stannite-structured Cu2MnSn(S,Se)4 film is obtained. A solar cell fabricated with such Cu2MnSn(S,Se)4 film as the absorber layer achieves efficiency of 1.79%, which is the highest efficiency reported to date for this material. This study demonstrates that Cu2MnSn(S,Se)4 is a promising photovoltaic material and has huge potential for the fabrication of low-cost solar cell.

materials science, multidisciplinary,physics, applied,energy & fuels
Solution-processed In2S3 nanosheet arrays for CuInS2 thin film solar cells

Wangwei Chen,Zhiyang Wan,Wenbo Cao,Chao Dong,Junwei Chen,Rong Liu,Liangxin Zhu,Xueqiang Zhang,Mingtai Wang

DOI: https://doi.org/10.1016/j.matlet.2021.129490

IF: 3

2021-05-01

Materials Letters

Abstract:In2S3 is a promising electron transporting material for solar cells. In this paper, In2S3 nanosheet arrays are grown on TiO2 films by a facile molecular precursor solution method for the first time. The composition, morphology and chemical valance states of the In2S3 nanosheet arrays are investigated by XRD, SEM, TEM and XPS techniques. Upon the in situ growth of CuInS2 nanoparticles into the In2S3 nanosheet arrays, the novel CuInS2 bulk heterojunction solar cells are obtained with a peak power conversion efficiency of 2.58% depending on the In2S3 nanosheet array height.

materials science, multidisciplinary,physics, applied
Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

Jiahua Tao,Xiaobo Hu,Yixin Guo,Jin Hong,Kanghua Li,Jinchun Jiang,Shaoqiang Chen,Chengbin Jing,Fangyu Yue,Pingxiong Yang,Chuanjun Zhang,Zhuangchun Wu,Jiang Tang,Junhao Chu

DOI: https://doi.org/10.1016/j.nanoen.2019.04.019

IF: 17.6

2019-06-01

Nano Energy

Abstract:Antimony selenide (Sb2Se3) thin film solar cells have gained worldwide intense research owing to their suitable bandgap, high absorption coefficient, benign grain boundaries, earth-abundant element constituents and low fabrication cost. It is extremely important to investigate the interface passivation and minimize the carrier recombination to realize high-efficiency Sb2Se3 solar cells. Very little is known, however, about the carrier recombination mechanisms at the interfaces of Sb2Se3 solar cells. Herein, we show that a novel solution-processed SnO2 layer (∼12 nm) incorporated into Sb2Se3 thin film solar cells results in high power conversion efficiency of 7.5%, namely, an improvement of 39% relative to that of the solar cell without SnO2 interfacial layer. Furthermore, the open-circuit voltage (V oc ) is the highest ever reported for Sb2Se3 solar cells. These improvements benefit from the better preferred [221] orientation, less bulk and interfacial defects in the Sb2Se3 absorbers, and relatively ideal heterointerfaces due to the SnO2 passivation. This work opens up new routes for the critical importance of interfacial control in Sb2Se3 solar cells, which could be extended to other emerging low-dimensional thin film solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Cu2 ZnSn(S1-x Se x )4 thin film solar cells prepared by water-based solution process

Minlin Jiang,Fei Lan,Xingzhong Yan,Guangyong Li

DOI: https://doi.org/10.1002/pssr.201308215

2014-01-01

physica status solidi (RRL) - Rapid Research Letters

Abstract:The kesterite Cu2ZnSn(S1–xSex)4 (CZTSSe) thin film solar cell has been developed rapidly due to its excellence in structural and optical properties and its abundance in raw materials. Both vacuum-based and solution-based methods have been successfully employed to fabricate CZTSSe thin film solar cells. In this Letter, we report an environmentally friendly, water-based, solution process for fabrication of high-efficiency CZTSSe thin film solar cells. High quality CZTSSe thin film is obtained by selenization under high temperature and Se vapor. An efficiency of 6.2% is achieved on CZTSSe thin film solar cell fabricated by such water-based solution process. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Novel solution processing of high-efficiency Earth-abundant Cu2 ZnSn(S,Se)4 solar cells.

Wenbing Yang,Hsin-Sheng Duan,Brion Bob,Huanping Zhou,Bao Lei,Choong-Heui Chung,Sheng-Han Li,William W Hou,Yang Yang

DOI: https://doi.org/10.1002/adma.201201785

IF: 29.4

2012-01-01

Advanced Materials

Abstract:A novel solution-based approach is presented to process earth-abundant Cu(2)ZnSn(S,Se)(4) absorbers using fully dissolved CZTS precursors in which each of the elemental constituents intermix on a molecular scale. This method enables the low-temperature processing of chemically clean kesterite films with excellent homogeneity. The high performance of resulting optoelectronic devices represents a chance to extend the impact of CZTS into the next chapter of thin-film solar cells.
: a promising approach for next generation thin fi lm photovoltaics

Huanping Zhou,Wan-Ching Hsu,Hsin-Sheng Duan,Brion Bob,Wenbing Yang,Tze-Bin Song,Chia-Jung Hsu,Yang Yang

2013-01-01

Abstract:Cu2ZnSn(S,Se)4 (CZTSSe) has received considerable attention as a material capable of driving the development of low-cost and high performance photovoltaics. Its high absorption coefficient, optimal band gap, and non-toxic, naturally abundant elemental constituents give it a number of advantages over most thin film absorber materials. In this manuscript, we discuss the current status of CZTSSe photovoltaics, and provide a comprehensive review of Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) nanocrystal (NCs)-based fabrication methods and solar cell characteristics. The focus will be on the relevant synthetic chemistry, film deposition, and the production of high efficiency photovoltaic devices. Various colloidal synthesis routes are currently used to form the highest quality CZTSSe film from the nanocrystals with controllable phase, size, shape, composition, and surface ligands. A variety of recipes are summarized for producing nanocrystal inks that are appropriate for forming CZTSSe absorber materials with a wide range of controllable optoelectronic properties. Deposition and post-processing, such as annealing and selenization treatments, play an important role in defining the phase and structure of the resulting material. Various film treatment strategies are outlined here, and their resulting material quality, device performance, and dominant photovoltaic loss mechanisms are discussed. Suggestions regarding needed improvements and future research directions are provided based on the current field of available literature.
Colloidal synthesis of zincblende Cu3InSnS5 nanocrystals and their application in the thin-film solar cell

Yong Cui,Wei Zhang,Bin Li,Xuetian Li,Hongmei Shao,Ritu Rai

DOI: https://doi.org/10.1007/s10854-024-12750-x

2024-05-25

Journal of Materials Science Materials in Electronics

Abstract:CuIn 0.7 Ga 0.3 Se 2 thin-film solar cells with the over 23% power conversion efficiency are viewed as one the most promising devices in the solar energy field. A tremendous amount of efforts is spent to explore new absorbable layer material because of the rare of indium and gallium. Using abundant element to partly substitute In or Ga is considered an effective way. In this paper, colloidal oleylamine-capped Cu 3 InSnS 5 quaternary nanocrystals are synthesized by hot injection way using mixed solvent of oleylamine and octadecene. The crystal structure, morphology, optical absorption, and valence state properties of as-synthesized oleylamine-capped Cu 3 InSnS 5 nanocrystals are determined by using X-ray powder diffraction, transmission electron microscopy, UV–vis spectrometry, and XPS. The XRD analysis of Cu 3 InSnS 5 quaternary nanocrystals possesses zincblende structure. UV–vis spectrometry characterization shows that the bandgap of the zincblende Cu 3 InSnS 5 quaternary nanocrystals is 1.35 eV, which is suitable for the absorbable layer for the thin-film solar cells. The XPS illustrates valence state of four elements. The as-fabricated glass/ITO/CdS/Cu 3 InSnS 5 nanocrystals/Al thin-film structure is obtained by spin-casting as-synthesized Cu 3 InSnS 5 nanocrystals. The thin-film solar cell displays power conversion efficiency under AM1.5G illumination.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Investigation of Cu2ZnSnS4 Thin Films with Controllable Cu Composition and Its Influence on Photovoltaic Properties for Solar Cells

Xinran Li,Huiyi Cao,Yuchen Dong,Fangyu Yue,Ye Chen,Pinghua Xiang,Lin Sun,Pingxiong Yang,Junhao Chu

DOI: https://doi.org/10.1016/j.jallcom.2016.10.024

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:The effects of Cu composition on the structural, morphological, optical properties of Cu2ZnSnS4 (CZTS) films prepared by RF magnetron sputtering and a post sulfurization, and CZTS solar cells performance have been investigated. The crystal structure characterized by XRD patterns, Raman and far-infrared spectra reveal that the secondary phases (e.g. SnS and Cu2SnS3) can be suppressed effectively by manipulating the Cu content in CZTS thin films. Furthermore, morphological studies indicate that the CZTS thin film with low Cu content shows a bilayer structure, while that with high Cu content exhibits the grain growth throughout the entire absorber film with some voids at the Mo/CZTS interface. Finally, a Cu-poor CZTS solar cell with 3.46% is fabricated. Temperature and excitation-power dependent Photoluminescence measurement reveals the radiative recombination between electrons in conduction band tails and holes bound to the neighboring acceptors levels in Cu-poor CZTS device. The diode parameters of Cu-poor CZTS solar cell are extracted and used to discuss the possible reason for limiting efficiency.
Sol-gel solution-processed Cu2SrSnS4 thin films for solar energy harvesting

Hanrui Xiao,Zhu Chen,Kaiwen Sun,Chang Yan,Jin Xiao,Liangxin Jiang,Xiaojing Hao,Yanqing Lai,Fangyang Liu

DOI: https://doi.org/10.1016/j.tsf.2020.137828

IF: 2.1

2020-01-01

Thin Solid Films

Abstract:•Cu2SrSnS4 (CSTS) thin films synthesized via a sol-gel based solution process.•Morphological, phases and optical properties of CSTS thin films characterized.•600°C annealing and Sr/Sn atomic ratios of 1.15 were the best preparation conditions.•Champion CSTS solar cell with 0.164% power conversion efficiency obtained.•Feasibility of solar energy harvesting of CSTS material demonstrated.
The effect of different Cu/Sn ratios on the properties of monoclinic Cu2SnS3 thin films and solar cells fabricated by the sol–gel method

Jie Wu,Chunhui Gao,Lu Han,Shanshan Shen,Ming Jia,Li Wang,Liangxing Jiang,Fangyang Liu

DOI: https://doi.org/10.1007/s10854-019-00725-2

2019-01-01

Abstract:Ternary Cu2SnS3 (CTS) is a promising material for thin-film solar cells because it consists of nontoxic and earth-abundant elements. The present paper reports the preparation of monoclinic CTS thin films by a sol–gel solution-based method. The effects of the Cu/Sn atomic ratio on the structure and morphology were investigated. As the atomic ratio of Cu/Sn varied from 1.6 to 2.0, the compactness of the CTS films improved; furthermore, secondary phases, such as SnS, gradually disappeared; and the grain size of the films decreased. The CTS film with a Cu/Sn ratio of 1.9 showed a monoclinic structure with homogeneous morphology and a band gap of 1.12 eV, yielding a power conversion efficiency of 0.58%. These results could pave the way for the development of CTS thin-film solar cells.
CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Bo Yang,Liang Wang,Jun Han,Ying Zhou,Huaibing Song,Shiyou Chen,Jie Zhong,Lu Lv,Dongmei Niu,Jiang Tang

DOI: https://doi.org/10.1021/cm500516v

IF: 10.508

2014-01-01

Chemistry of Materials

Abstract:Recently, CuSbS2 has been proposed as an alternative earth-abundant absorber material for thin film solar cells. However, no systematic study on the chemical, optical, and electrical properties of CuSbS2 has been reported. Using density functional theory (DFT) calculations, we showed that CuSbS2 has superior defect physics with extremely low concentration of recombination-center defects within the forbidden gap, espeically under the S rich condition. It has intrinsically p-type conductivity, which is determined by the dominant Cu vacancy (V-Cu) defects with the a shallow ionization level and the lowest formation energy. Using a hydrazine based solution process, phase-pure, highly crystalline CuSbS2 film with large grain size was successfully obtained. Optical absorption investigation revealed that our CuSbS2 has a direct band gap of 1.4 eV. Ultraviolet photoelectron spectroscopy (UPS) study showed that the conduction band and valence band are located at 3.85 eV and -5.25 eV relative to the vacuum level, respectively. As the calculations predicted, a p-type conductivity is observed in the Hall effect measurements with a hole concentration of similar to 10(18) cm(-3) and hole mobility of 49 cm(2)/(V s). Finally, we have built a prototype FTO/CuSbS2/CdS/ZnO/ZnO:Al/Au solar cell and achieved 0.50% solar conversion efficiency. Our theoretical and experimental investigation confirmed that CuSbS2 is indeed a very promising absorber material for solar cell application.
Solution-Processed Trigonal Cu2BaSnS4 Thin-Film Solar Cells

Zhu Chen,Kaiwen Sun,Zhenghua Su,Fangyang Liu,Ding Tang,Hanrui Xiao,Lei Shi,Liangxing Jiang,Xiaojing Hao,Yanqing Lai

DOI: https://doi.org/10.1021/acsaem.8b00514

IF: 6.4

2018-01-01

ACS Applied Energy Materials

Abstract:Recently, Cu2BaSnS4 (CBTS) thin film has emerged as a promising candidate for single- or multiple-junction photovoltaics (PVs) due to its excellent optical and electrical properties, and earth-abundant, nontoxic constituents. In this study, a molecular solution-based nonvacuum process has been employed to prepare CBTS thin films for solar cells. The obtained CBTS films show trigonal structure with band gap of 2.01 eV and p-type conductivity. The solar cell device with configuration of Mo-coated glass/CBTS/CdS/i-ZnO/ITO has achieved a power conversion efficiency (PCE) of 1.72% for CBTS with a Ba/Sn atomic ratio of 1.30. An abrupt band gap cutoff in external quantum efficiency (EQE) data coupled with the very small offset (only 10 meV) in band gap between EQE and photoluminescence (PL) measurements reveals that band tailing is not the limiting factor in CBTS.

Solution-Processed Cu2sns3 Thin Film Solar Cells

Synthesis and Characterization of Hydrazine Solution Processed Cu12Sb4S13 Film

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

Preparation and Characterization of Cuins2 Thin Films for Solar Cells by Chemical Bath Deposition

Advances In Cu2znsn(S,Se)(4) Thin Film Solar Cells

Solution-processed CuSbS 2 Solar Cells Based on Metal–organic Molecular Solution Precursors

Hydrazine Processed Cu2SnS3 Thin Film and Their Application for Photovoltaic Devices

Progress in the Fabrication of Cu 2 ZnSnS 4 Thin Film for Solar Cells

Kesterite Thin‐Film Solar Cells: Advances in Materials Modelling of Cu2ZnSnS4

A promising photovoltaic material Cu2MnSn(S,Se)4: Film growth and its application in solar cell

Solution-processed In2S3 nanosheet arrays for CuInS2 thin film solar cells

Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

Cu2 ZnSn(S1-x Se x )4 thin film solar cells prepared by water-based solution process

Novel solution processing of high-efficiency Earth-abundant Cu2 ZnSn(S,Se)4 solar cells.

: a promising approach for next generation thin fi lm photovoltaics

Colloidal synthesis of zincblende Cu3InSnS5 nanocrystals and their application in the thin-film solar cell

Investigation of Cu2ZnSnS4 Thin Films with Controllable Cu Composition and Its Influence on Photovoltaic Properties for Solar Cells

Sol-gel solution-processed Cu2SrSnS4 thin films for solar energy harvesting

The effect of different Cu/Sn ratios on the properties of monoclinic Cu2SnS3 thin films and solar cells fabricated by the sol–gel method

CuSbS2 As a Promising Earth-Abundant Photovoltaic Absorber Material: A Combined Theoretical and Experimental Study

Solution-Processed Trigonal Cu2BaSnS4 Thin-Film Solar Cells