Abstract:An oxygen-zinc plasma and an oxygen-zinc-aluminum plasma are formed by pulsed laser ablation of a Zn target or pulsed laser co-ablation of a Zn target and an Al target in an electron cyclotron resonance (ECR) discharge-generated oxygen plasma for the deposition of ZnO and Al-doped ZnO (AZO) films. The plasmas are characterized spectroscopically by time-integrated and time-resolved optical emission spectroscopy. Both the oxygen-zinc plasma and the oxygen-zinc-aluminum plasma contain excited species originally present in the working O2 gas and energetic species ablated from the targets. The optical emission of the oxygen-zinc-aluminum plasma is abundant in the emission bands of oxygen molecular ions and the emission lines of mono-atomic oxygen, zinc and aluminum atoms and atomic ions. The time-integrated spectra as well as the time-resolved spectra of the plasma emission indicate that the oxygen species in the ECR oxygen plasma experience additional excitation by the expanding ablation plumes, and the ablated species are excited frequently when traveling accompanying the plume expansion in the oxygen plasma, making the formed plasma highly excited and very reactive, which plays an important role in the reactive growth of ZnO matrix and the in-situ doping of Al into the growing ZnO matrix. The deposited ZnO and AZO films were evaluated for composition analysis by energy dispersive X-ray spectroscopy, structure characterization by X-ray diffraction and optical transmission measurement. The deposited ZnO is slightly rich in O. The Al concentration of the AZO films can be controlled and varied simply by changing the repetition rate of the laser used for Al target ablation. Both the ZnO and the AZO films are featured with hexagonal wurtzite crystal structure and exhibit high optical transparency in a wide spectral region. Al doping results in an improvement in the ultraviolet transparency, a blue shift in the absorption edge and a widening of the band gap.

Oxygen Interstitial Mediated Effective Doping of Al in ZnO:Al Films Prepared by Magnetron Sputtering

In-Situ Doping Preparation of Al-Doped Zno Films Via Pulsed Laser Co-Ablation of Zn and Al Targets with Assistance of Oxygen Plasma

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

Influence of Al Doping on the Properties of Zno Thin Films Grown by Atomic Layer Deposition

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Defects Generated by MF Magnetron Sputtering and Their Influences on the Electrical and Optical Properties of Al Doped ZnO Thin Films

Electrochemical Characteristics of Al2o3-Doped Zno Films by Magnetron Sputtering

Non-fluorinated superhydrophobic and micro/nano hierarchical Al doped ZnO film: the effect of Al doping on morphological and hydrophobic properties

Effect of Al-doping on Crystallinity and Microstructure of ZnO:Al Thin Films

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

Directed oxidation growth of Al-Si-Zn alloy

Effects of Al doping on the optical and electrical properties of pre-synthesized ZnO powders by solid state method

Spatial atmospheric atomic layer deposition of Al(x)Zn(1-x)O

Underlying mechanism of Al incorporation in sol-gel-based dip-coated ZnO:Al thin films

Al doping to promote optical transmissibility of ZnO thin films

Atomic layer deposition of Al-doped ZnO films using aluminum isopropoxide as the Al precursor

The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering