The Anti-Surfactant Effect of Silane on the Facets-Controlled Growth of Gan Nanorods by Mocvd

J. Z. Li,Z. Z. Chen,S. F. Li,Q. Q. Jiao,Y. L. Feng,S. X. Jiang,Y. F. Chen,T. J. Yu,B. Shen,G. Y. Zhang
DOI: https://doi.org/10.1016/j.spmi.2016.05.034
IF: 3.22
2016-01-01
Superlattices and Microstructures
Abstract:N-polar GaN nanorods were selective area grown by continuous mode metalorganic chemical vapor deposition (MOCVD) under a Ga-rich and high silane flow condition. The interruption comparing with continuous supply of silane flow was performed to study the role of silane flux. High resolution scanning electron microscopy (SEM), x-ray diffraction (XRD), cathodoluminescence (CL) and x-ray photoelectron spectroscopy (XPS) measurements were performed. The enhanced vertical growth rate was achieved as 42 mu m/h and sharp smooth m-plane, r-plane and c-plane facets were obtained for the nanorods with high silane flux. Si-N bonds were clarified to be formed on the surface of the nanorod by XPS spectra. The silane acting as anti-surfactant was suggested to explain the diffusion and incorporation of the species on the facets of GaN nanorods. (C) 2016 Elsevier Ltd. All rights reserved.
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