Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

STUDY ON PHOTOLUMINESCENCE OF HIGH QUALITY GaN

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Study on GaN Nanostructures: Growth and the Suppression of the Yellow Emission

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

Investigation of photoluminescence excitation spectra from GaN films grown by low-pressure MOVPE

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Time-resolved Photoluminescence Studies of InGaN Epilayers

Photoluminescene Spectra of GaN Epilayer Grown on Si Substrate

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Investigation on the Properties of Nonpolar M-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates

High-Quality Gan Grown by Gas-Source Mbe

Measurement and analysis of photoluminescence in GaN

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Photoluminescence of Mg-Doped GaN Epilayers at Different Concentrations

Cathodoluminescence study of GaN-based film structures

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE