Numerical Simulation for the Raman Spectrum of SiC Nano-rod

赵军,范守善,张树霖

DOI: https://doi.org/10.3969/j.issn.1004-5929.2004.04.003

2004-01-01

Abstract:This article applied the method of solving the force constant matrix to obtain the phonon density of 3C-SiC, upon which the Raman spectrum could be fitted roughly and the experiment result could be qualitatively explained.

What problem does this paper attempt to address?

Comparison Of Models For Raman Spectra Of Si Nanocrystals

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/PhysRevB.55.9263

IF: 3.7

1997-01-01

Physical Review B

Abstract:Within the framework of a partial-density approach, the confinement of vibrations in spherical Si nanocrystals is studied and the Raman frequency shifts of Si spheres with different sizes are derived based on the Raman spectra obtained by a bond-polarizability model. The results obtained by the bond-polarizability model are compared with those by the phenomenological model developed by Richter et al. [Solid State Commun. 39, 625 (1981)].
The study of the optical phonon frequency of 3C-SiC by molecular dynamics simulations with deep neural network potential

Wei Chen,Liang-Sheng Li

DOI: https://doi.org/10.1063/5.0049464

IF: 2.877

2021-06-28

Journal of Applied Physics

Abstract:In this work, we implement molecular dynamics (MD) simulations with deep neural network (DNN) potential trained with the datasets from ab initio calculations to determine the dielectric spectra of crystal. The fluctuations of the total dipole moment of crystal, which are obtained from MD, can be directly related to the frequency-dependent permittivity according to the work of Neumann and Steinhauser [Chem. Phys. Lett. 102, 508–513 (1983)]. We generalize their theoretical work to express the permittivity in the form of a tensor and perform MD simulations for cubic silicon carbide (3C-SiC) with 8000 atoms to assess the accuracy. The infrared resonance frequency and the phonon linewidth obtained by the DNN potential are compared with those obtained by the empirical Vashishta potential and experiments. The results of the DNN potential are in good agreement with the experimental measurements. It shows that we can carry out MD simulations for large systems with the accuracy of ab initio calculations to obtain dielectric properties.

physics, applied
Study On The Applied Limitation Of The Micro-Crystal Model For Raman Spectra Of Nano-Crystalline Semiconductors

S. L. Zhang,S. N. Wu,Y. Yan,T. Hu,J. Zhao,Y. Song,Q. Qu,W. Ding

DOI: https://doi.org/10.1002/jrs.2106

IF: 2.727

2008-01-01

Journal of Raman Spectroscopy

Abstract:The limitation in sample size and the choice in parameters for the application of the micro-crystal (MC) model have been tested and discussed. The testing was performed through the fitting of calculated Raman spectra by using the MC model with the observed Raman spectra for nearly uniform-sized nano-crystalline (NC)-Si of smaller than 2 nm. The results showed that the good fittings could not be obtained, if the phonon dispersion curves omega(q) and Raman linewidths Gamma of bulk-crystals (BCs) were used, i.e. if the bulk-like approximation (BLA) was used in the fitting. Moreover, an analysis of the fitting results indicates that when the size of NC-Si is smaller than about 4 nm, the MC model based on -BLA will be invalid. Copyright (C) 2008 John Wiley & Sons, Ltd.
Monte Carlo Simulation of Electron Transport in Silicon Carbide

SHEN Jin-peng,GUO Wen-ping,WU Lian-hua,ZHANG Chen,WANG Yong,CHEN Hao,JIANG Jian-jun

DOI: https://doi.org/10.3321/j.issn:1001-9731.2007.04.009

2007-01-01

Abstract:The electron transport properties in 2H-,4H-,and 6H-silicon carbide are investigated numerically with an ensemble Monte Carlo technique.A method of approximate momentum relaxation rate to get the angle of scattering are considered in the simulation to reduce the scattering number.And an innovative method of lookup table is also obtained to calculate free-flying time,compared with the self-scattering method of variable, it can completely eliminate self-scattering,saving a great deal of cpu time.
Microscopic calculations on Raman scattering from acousitc phonons confined in Si nanocrystals

J. Zi,K. Zhang,x. Xie

DOI: https://doi.org/10.1103/PhysRevB.58.6712

1998-07-22

Abstract:Raman scattering from the acoustic phonons confied in si nanocrystals is investigated by a microscopic lattice-dynamical calculation. Polarized and depolarized spectra are found to be rather different, indicated from different acoustic phonons. The polarized scattering is more pronounced than the depolarized one. The calculated results are compared with the recent experimental data. The matrix effects are discussed.

Soft Condensed Matter
Microscopic Calculations of Raman Scattering from Acoustic Phonons Confined in Si Nanocrystals

J Zi,Km Zhang,Xd Xie

DOI: https://doi.org/10.1103/physrevb.58.6712

1998-01-01

Abstract:Raman scattering from the acoustic phonons confied in si nanocrystals is investigated by a microscopic lattice-dynamical calculation. Polarized and depolarized spectra are found to be rather different, indicated from different acoustic phonons. The polarized scattering is more pronounced than the depolarized one. The calculated results are compared with the recent experimental data. The matrix effects are discussed.
Raman Spectral Study of Silicon Nanowires

BB Li,DP Yu,SL Zhang

DOI: https://doi.org/10.1103/physrevb.59.1645

1999-01-01

Abstract:Raman spectra of silicon nanowires (Si NW's) have been analyzed, and the observed Raman peaks were assigned. The typical features of the first-order Raman peaks of the optical phonons were found matching those predicted by the quantum confinement effect. However, the sizes of Si NW's, derived from the microcrystal model (MCM) of Raman spectra do not fit the usual confined size, the diameter, of the nanowires from transmission electron microscope images. Abundant structure defects can be observed in Si NW's so that the Si NW's actually consist of many smaller Si grains. The size of such Si grains was found to give a better agreement with the size derived from the Raman spectra. This indicates that MCM can be used to interpret the Raman spectrum of Si NW's as long as one takes into account the influence of defect on the confined size.
Theoretical Study on the Vibrational Spectra and Potential Energy Curves for SiC (X3Π) and SiS (X1Σ+) Molecules

Qunchao Fan,Hongrui Tian,Zhixiang Fan,Huidong Li,Jia Fu,Jie Ma,Feng Xie

DOI: https://doi.org/10.1016/j.saa.2022.122067

2023-01-01

Abstract:In this work, the vibrational constants (ωe,ωexe) calculated by the variational algebraic method (VAM) and some other molecular constants (De,re,Be,αe) were used to construct the improved Hulburt–Hirschfelder (IHH) analytical potential energy function (APEF). Not only that, but the calculated VAM potential points are used as the ’true’ energies to determine the value of the variational parameter λ which is the pivotal fitting parameter in the IHH potential. With limited experimental data, high-precision IHH potential can be achieved by combining the VAM and the IHH APEF. This combination of the VAM and the IHH APEF is referred to be VAIHH APEF, which is employed to study the vibrational energies and potential energy curves (PECs) of SiC (X3Π) and SiS (X1Σ+) molecules, yielding full vibrational spectra and spectroscopic constants. The calculational results indicate that the VAIHH APEFs of SiC (X3Π) and SiS (X1Σ+) molecules are in good agreement with the experimental RKR potential points. Accurate PECs of SiC (X3Π) and SiS (X1Σ+) molecules imply that the VAIHH APEF is of high quality.
Calculations on the size effects of Raman intensities of silicon quantum dots

Wei Cheng,Shang-Fen Ren

DOI: https://doi.org/10.1103/physrevb.65.205305

IF: 3.7

2002-04-25

Physical Review B

Abstract:Raman intensities of Si quantum dots (QD’s) with up to 11489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these QD’s, including all vibration frequencies and vibration amplitudes, are calculated directly from the lattice-dynamic matrix by using a microscopic valence force field model combined with the group theory. Then the Raman intensities of these quantum dots are calculated by using a bond-polarizability approximation. The size effects of the Raman intensity in these QD’s are discussed in detail based on these calculations. The calculations are compared with the available experimental observations. We are expecting that our calculations can further stimulate more experimental measurements.

physics, condensed matter, applied,materials science, multidisciplinary
Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

Zhe Chuan Feng,Dishu Zhao,Lingyu Wan,Weijie Lu,Jeffrey Yiin,Benjamin Klein,Ian T. Ferguson

DOI: https://doi.org/10.3390/ma15248751

IF: 3.4

2022-12-08

Materials

Abstract:Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC, while the anisotropic properties of a-face 4H-SiC are revealed and studied in detail via combined experiments and theoretical calculation. The variation functional relationship of the angle between the incident laser polarization direction and the parallel (perpendicular) polarization direction was well established. The selection rules of wurtzite 4H-SiC are deduced, and the intensity variations of the A1, E2, and E1 Raman phonon modes dependent on the incident angle are calculated, and well-matched with experimental data. Raman tensor elements of various modes are determined.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Raman Spectra of SiC Nanorods with Different Excitation Wavelengths

Yan,Fumin Huang,Shulin Zhang,Bangfen Zhu,Eryi Shang,Shoushan Fan

DOI: https://doi.org/10.1007/bf02901158

2001-01-01

Chinese Science Bulletin

Abstract:With increasing excitation wavelength from 514 to 782 nm, a significant difference in the Raman spectra of SiC nanorods was observed as compared to bulk material. The intensity ratio of the LO mode to that of the IF mode increases with the excitation wavelength increasing. This has been identified as resonant Raman scattering caused by Fröhlich interaction.
The Study of the Raman Spectra of Sic Layers in Triso Particles

Fang Chao,Liu Ma-Lin

IF: 0.906

2012-01-01

Acta Physica Sinica

Abstract:The Raman spectra of the SiC layers in TRISO particles of fuel elements of HTGRs are studied. Through the analysis of the Raman shifts, the FWHM and intensities, the crystal phases, the residual stress and densities of SiC layers and corresponding spectroscopic features are clarified. The study of the 2D correlation spectrum of first order Raman scattering of SIC layer shows that the LO mode is much more sensitive than the TO mode to the change of density of SiC layer. All these conclusions are significant for synthesising TRISO particles and fuel elements of HTGRs and estimating their qualities.
Effect of defects on optical phonon Raman spectra in SiC nanorods

Shu-Lin Zhang,Bang-Fen Zhu,Fuming Huang,Yan Yan,Er-yi Shang,Shoushan Fan,Weigiang Han

DOI: https://doi.org/10.1016/S0038-1098(99)00262-8

IF: 1.934

1999-01-01

Solid State Communications

Abstract:Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental observation and numerical calculation indicate that the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the Raman features of optical phonons in polar semiconductor quantum wires such as SiC nanorods, (C) 1999 Elsevier Science Ltd. All rights reserved.
Lattice Dynamics of Dirac Node-Line Semimetal Zrsis

Wei Zhou,Heng Gao,Junran Zhang,Ruiyang Fang,Hao Song,Tao Hu,Alessandro Stroppa,Ling Li,Xuefeng Wang,Shuangchen Ruan,Wei Ren

DOI: https://doi.org/10.1103/physrevb.96.064103

IF: 3.7

2017-01-01

Physical Review B

Abstract:We report a comprehensive study of lattice dynamics of the Dirac node-line semimetal ZrSiS single crystal by Raman spectroscopy and first-principles calculations. The weak covalent bonding between ZrSiS layers is confirmed by the absence of low-frequency shear or breathing Raman modes down to 15 cm(-1). All six Raman-active optical phonons are identified at 300 K, whose energies and symmetries match our phonon-dispersion calculations and polarized Raman measurements. The thermodynamic stability is verified from 77 to 300 K, and, with increasing temperature, sizable softening of Raman modes is observed with broadened profiles. The first-order temperature coefficients are found to be linearly dependent on temperature. Furthermore, using multiple excitation laser wavelengths of 488, 514.5, 568, 647, and 785 nm, we find that three out-of-plane Raman modes are all nondispersive, and their normalized intensity resonances at different laser energies can be attributed to the different interband transitions. Our work provides detailed information of ZrSiS lattice vibrations, as well as the coupling between ZrSiS lattice vibrations and its electronic states.
Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Yuehui Li,Ruishi Qi,Ruochen Shi,Ning Li,Yuanwei Sun,Bingyao Liu,Peng Gao

DOI: https://doi.org/10.1016/j.scib.2020.02.026

2019-09-22

Abstract:Surface phonon polaritons hold much potential for subwavelength control and manipulation of light at the infrared to terahertz wavelengths. Here, aided by monochromatic scanning transmission electron microscopy - electron energy loss spectroscopy technique, we study the excitation of optical phonon modes in SiC nanorods. Surface phonon polaritons are modulated by the geometry and size of SiC nanorods. In particular, we study the dispersion relation, spatial dependence and geometry and size effects of surface phonon polaritons. These experimental results are in agreement with dielectric response theory and numerical simulation. Providing critical information for manipulating light in polar dielectrics, these findings should be useful for design of novel nanoscale phonon-photonic devices.

Mesoscale and Nanoscale Physics
Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Ying Chang,Saisai He,Mingyuan Sun,Aixia Xiao,Jiaxin Zhao,Lulu Ma,Wei Qiu

DOI: https://doi.org/10.1155/2021/2860007

2021-12-31

Journal of Spectroscopy

Abstract:Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. However, Raman measurements based on the specific fixed Raman geometry/polarization configuration are limited for the quantified analysis of c-Si performance, which makes it difficult to meet the high-end requirements of advanced silicon-based microelectronics and optoelectronics. Angle-resolved Raman measurements have become a new trend of experimental analysis in the field of materials, physics, mechanics, and optics. In this paper, the characteristics of the angle-resolved polarized Raman scattering of c-Si under the in-axis and off-axis configurations are systematically analyzed. A general theoretical model of the angle-resolved Raman intensity is established, which includes several alterable angle parameters, including the inclination angle, rotation angle of the sample, and polarization directions of the incident laser and scattered light. The diversification of the Raman intensity is given at different angles for various geometries and polarization configurations. The theoretical model is verified and calibrated by typical experiments. In addition, this work provides a reliable basis for the analysis of complex polarized Raman experiments on silicon-based structures.

spectroscopy,biochemical research methods
[Study on Extracting Raman Spectra of Single Component and Structure from Impure Amorphous Spectra].

Gao Min,Liu Wei,Yang Jun-tao,Zhang Shu-lin,Guo Hui,Zhang Guo-yi

DOI: https://doi.org/10.3321/j.issn:1000-0593.2007.05.024

2007-01-01

Spectroscopy and spectral analysis

Abstract:X-ray diffraction and Raman spectra show that the used amorphous SiC and GaN samples are impure. Adopting the new subtracting method with weighted impurity spectra, we obtained amorphous SiC and GaN Raman spectra involving only single component and structure. The good fitting between the calculated phonon density of states (PDOS) and the reduced Raman spectra confirms that the purified Raman spectra is really the amorphous Raman spectra, and the adopted spectral subtracting method with weighted impurity spectra is successful.
The Vibrational Density of States and Specific Heat of Si Nanocrystals

Xinhua Hu,Guozhong Wang,Weimin Wu,Ping Jiang,Jian Zi

DOI: https://doi.org/10.1088/0953-8984/13/39/101

2001-01-01

Journal of Physics Condensed Matter

Abstract:The vibrational density of states and phonon specific heat of Si nanocrystals are studied by means of a lattice dynamical calculation. The vibrational density of states of Si nanocrystals is distinct from the bulk one at low and high frequencies owing to the finite-size effect. At low frequencies there is an excess of the vibrational modes, while there is a deficit at high frequencies. At low frequencies the dependence of the vibrational density of states on frequency is intermediate between linear and quadratic. The specific heat of Si nanocrystals is enhanced as compared to that of the bulk with a maximal excess at around 90 K. The dependence of the specific heat on temperature deviates from the known T3-law for crystalline systems at low temperatures.
Quantum-chemical perspective of nanoscale Raman spectroscopy with three-dimensional phonon confinement model

Vitaly I. Korepanov,Hiro-o Hamaguchi

DOI: https://doi.org/10.48550/arXiv.1603.01438

IF: 2.552

2016-03-04

Chemical Physics

Abstract:Raman spectroscopy of crystalline/molecular systems is well backed with quantum chemical calculations and group theory, making it a unique characterization tool. For the "intermediate" case of nanoscale systems, however, the use of Raman spectroscopy is limited by the lack of such theoretical bases. Here, we suggest to couple a scaled quantum-mechanical (SQM) calculation with the phonon confinement model (PCM) to construct a universal and physically consistent basis for nanoscale Raman spectroscopy. Unlike the commonly used one-dimensional dispersion PCM, we take into account the confinement along all the three dimensions of the k-space. We apply it to diamond nanoparticles of sub-50nm size, a system with pronounced anisotropy of dispersion for which the use of three-dimensional dispersion is a requisite. The model excellently reproduces size-sensitive spectral features, including the peak position, bandwidth and asymmetry of the sp3 C-C Raman band. This fundamental approach can be easily generalized to other nanocrystalline solids to hopefully contribute the future development of quantitative nanoscale Raman spectroscopy.
Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

H XIA,YL HE,LC WANG,W ZHANG,XN LIU,XK ZHANG,D FENG,HE JACKSON

DOI: https://doi.org/10.1063/1.360494

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals.

Numerical Simulation for the Raman Spectrum of SiC Nano-rod

Comparison Of Models For Raman Spectra Of Si Nanocrystals

The study of the optical phonon frequency of 3C-SiC by molecular dynamics simulations with deep neural network potential

Study On The Applied Limitation Of The Micro-Crystal Model For Raman Spectra Of Nano-Crystalline Semiconductors

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Microscopic calculations on Raman scattering from acousitc phonons confined in Si nanocrystals

Microscopic Calculations of Raman Scattering from Acoustic Phonons Confined in Si Nanocrystals

Raman Spectral Study of Silicon Nanowires

Theoretical Study on the Vibrational Spectra and Potential Energy Curves for SiC (X3Π) and SiS (X1Σ+) Molecules

Calculations on the size effects of Raman intensities of silicon quantum dots

Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC

Raman Spectra of SiC Nanorods with Different Excitation Wavelengths

The Study of the Raman Spectra of Sic Layers in Triso Particles

Effect of defects on optical phonon Raman spectra in SiC nanorods

Lattice Dynamics of Dirac Node-Line Semimetal Zrsis

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

[Study on Extracting Raman Spectra of Single Component and Structure from Impure Amorphous Spectra].

The Vibrational Density of States and Specific Heat of Si Nanocrystals

Quantum-chemical perspective of nanoscale Raman spectroscopy with three-dimensional phonon confinement model

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy