Abstract:The transient processes of phonon scattering and transmission in Si phononic crystals with periodic pores are simulated using the concurrent atomistic-continuum method. The nature of phonon transport is demonstrated to be dependent on the relation between the phonon wavelength, λ, the period length, p, and the neck width, n, of the phononic crystal. Three distinct regimes have been observed: (1) phonons with wavelengths equal to 2.9p or larger propagate predominantly ballistically, which is accompanied by specular reflection of varying extents, depending on the wavelength of the phonons; the properties of these phonons are consistent with the phonon dispersion relations of the phononic crystal modelled as a homogenous and harmonic system; (2) phonons with wavelengths < n are partly reflected by the pore boundaries and partly propagate ballistically in the solid regions of the necks; two types of vibrational modes are identified: the single crystal Si phonon modes, and the vibrational modes resulting from internal surface scattering; (3) phonons with wavelength close to p are most strongly scattered, and the internal surface-related modes dominate the transport; these modes have the slowest group velocities and lowest energy transmission, and the transport is predominantly diffusive even for specimens originally at zero temperature. For phononic crystals that contain a single crystal heater at their center, the interface between the single crystal heater and the phononic structure provides a strong resistance to short wavelength phonons, leading to predominantly diffusive phonon transport and an average energy flux that is two orders of magnitude lower than a same-sized single crystal specimen.

Microscopic Calculations of Raman Scattering from Acoustic Phonons Confined in Si Nanocrystals

Microscopic calculations on Raman scattering from acousitc phonons confined in Si nanocrystals

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Phonon-Defect Scattering in Doped Silicon by Molecular Dynamics Simulation

Raman spectroscopy of optical phonons confined in semiconductor quantum dots and nanocrystals

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Low-Frequency Raman Scattering from Nanocrystals Caused by Coherent Excitation of Phonons

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Spatially and Tensor-Resolved Raman Analysis for the Determination of Phonon Deformation Potentials on the Microscopic Scale in Si Single-Crystal

Phonon scattering in doped silicon by molecular dynamics simulation

Calculations on the size effects of Raman intensities of silicon quantum dots

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Reconstruction Of Phonon Dispersion In Si Nanocrystals

Phonon Confinement in Stressed Silicon Nanocluster

The Vibrational Density of States and Specific Heat of Si Nanocrystals

The Observation of the Low-Frequency Acoustic Phonon Torsional Modes in Nanocrystalline Silicon

Interference, scattering, and transmission of acoustic phonons in Si phononic crystals

RAMAN SPECTRA FROM ACOUSTIC PHONONS IN NEARLY PERIODIC SiGe/Si SUPERLATTICES

Raman Scattering Intensities of Folded Longitudinal Acoustic Phonons in Ge X Si 1- X / Si Superlattices

Raman Investigation of Defective Sic Nanocrystals

Nanoscale Probing of Localized Surface Phonon Polaritons in SiC Nanorods with Swift Electrons