Pt-LaF3 Mixture Film Dissolved Oxygen Sensor Based on FET Structure

那兴波,牛文成,李华伟,谢建湘
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.09.023
2001-01-01
Chinese Journal of Semiconductors
Abstract:A Pt-LaF 3 mixture film solid-state dissolved oxygen sensor is descsibed based on FET structure by using carbon paste film forming method.The sensing mechanism,the device structure and the response characteristics are analyzed.And the device's characteristics are measured as well.The response curves of ΔV rs (the gate voltage variety)-(dissolved oxygen concentration) are bound at different bias and different temperature.
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