Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Application of Development-Free Vapor Photolithography in Etching Sol-Gel-derived Silica Films

Progress in the Study of the Development-Free Vapor Photolithography(Dfvp)

Studies on the Interfacial Etching Reaction of Development-Free Vapor Photolithography

Developments and Prospects of Immersion Control System in Immersion Lithography Machine

Development of an In-Situ Nanofabrication Instrument for Ice Lithography

Development-Free Vapor Laser Photolithography with 0.4 Mu M Resolution

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Sol-gel Preparation of a Silica Antireflective Coating with Enhanced Hydrophobicity and Optical Stability in Vacuum

Solvent-Free Nanofabrication Based on Ice-Assisted Electron-Beam Lithography.

Development of SiO2 UV-curable materials and their fine-patterning using sol-gel method

An HF-Free Etching of SiO2for Soft Lithography

A simple and residual-layer-free solute–solvent separation soft lithography method

An HF-Free Etching of SiO 2 for Soft Lithography

Formation of Anti-Etching Nanopatterns in Field-Emission Scanning Probe Lithography on Calixarene Films

Continuous flow ink etching for direct micropattern of silicon dioxide

Fourier transform infrared spectroscopy and oxygen luminescence probing combined study of modified sol–gel derived film

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Application of Sol-Gel process in the fabrication of film optical planar waveguides

STUDIES ON THE REACTION OF VAPOR HF WITH SILICON DIOXIDE UNDER POLYMER FILM

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

Silicon microstructure processing method based on femtosecond laser treatment and wet etching