Design on electrostatically excited silicon micromachined resonant pressure sensor

Sen REN,Wei-zheng YUAN,Jin-jun DENG,Xiao-dong SUN

DOI: https://doi.org/10.3969/j.issn.1000-9787.2014.01.017

2014-01-01

Abstract:A silicon micromachined resonant pressure sensor with electrostatic excitation and capacitive detection is designed,which uses improved lateral dynamically balanced double-ended tuning fork resonator. The fabrication process is based on silicon-on-insulator(SOI) wafer. Connecting truss has been developed to restrain perpendicular position shift of the resonator when the diaphragm deflects. Considering weak signal and same frequency interference in detection,several methods such as guard electrodes, reduced AC drive voltage amplitude,differential capacitive detection and scheme of high-frequency carrier modulation and demodulation is taken.Furthermore,open-loop measurement system is designed based on interface circuit,and preliminary character measurements is carried out under atmospheric pressure packaging condition. Testing results show that the fundamental resonant frequency is 33. 886 kHz,and vibration quality factor is 1222. Over the gauge pressure range of 0 ~ 280 kPa,the nonlinearity is 0. 018 % FS,the hysteresis error is 0. 176 % FS,the repeatability is 0. 213 % FS,and the average temperature drift of the resonator is- 0. 037 % / ℃ at the range of- 20~ 60 ℃.