XAFS Study on ZnO Films Grown by Molecular Beam Epitaxy

吴志浩,周映雪,韦世强,陈栋梁,俞根才,张新夷

DOI: https://doi.org/10.3321/j.issn:0253-3219.2004.07.004

2004-01-01

Nuclear Techniques

Abstract:Effects of growth conditions including lattice mismatch and growth temperature on the local structures of ZnO films prepared by MBE have been investigated using fluorescence EXAFS at Zn K edge. The ZnO films were deposited on the Si substrate at 200℃ and on sapphire substrate at 200℃ or 300℃ respectively. The coordination number N in the first shell (number of O atoms immediately surrounding a central Zn atom) remains constant 4 or so for all samples. However, the degree of disorder σ2 (mean squared displacement) of the local structure is varied with the growth conditions. At the same growth temperature 200℃, the degree of disorder is reduced from 0.0080 A2 to 0.0054 A2 as the substrate is changed from Si to sapphire; on the same sapphire substrate, the degree of disorder decreases from 0.0054 A2 to 0.0039 A2 when the growth temperature is increased from 200℃ to 300℃. Therefore, the higher growth temperature and smaller lattice mismatch can improve the disorder of local structures; the crystal quality of ZnO film will be improved as well.