Abstract:We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt hetero-interfaces are replaced by a spatially inhomogeneous composition profile $x$. Structural relaxation and the strain field calculations are performed through the Keating valence force field (VFF) model, while the electronic and optical properties are determined within the empirical tight-binding (ETB) approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs.

Effect of an In-Situ Thermal Annealing on the Structural Properties of Self-Assembled Gasb/Gaas Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Effects of Rapid Thermal Annealing on Self-Assembled InGaAs/GaAs Quantum Dots Superlattice

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure

Annealing of Self-Assembled InAs/GaAs Quantum Dots: A Stabilizing Effect of Beryllium Doping

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Effect of Rapid Thermal Annealing on InAs/GaAs Quantum Dot Solar Cells

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

Evolution of Inas Quantum Dots During Annealing Process

Annealing Effects on Optical and Structural Properties of 1.3-Μm GaInNAs/GaAs Quantum-Well Samples Capped with Dielectric Layers

Atomic-column Scanning Transmission Electron Microscopy Analysis of Misfit Dislocations in GaSb/GaAs Quantum Dots

Rapid Thermal Annealing and Photoluminescence of Type-Ii GaSb Single Monolayer Quantum Dot Stacks

Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure