Abstract:The interfacial structure plays a crucial role in controlling the growth of epitaxial film. However, it is still a formidable task to observe the interface structure at the atomic scale, because the detected signals from the interface become very weak due to the strong attenuation and decoherence when the incident wave passes through the films. With the advent of scanning tunneling microscopy (STM), significant progress has been made in observing the interface structure of thin films. Many studies have demonstrated the typical Si(111)-7×7 superstructure below the metal films in the past. Although the 7×7 superstructures are visible, the 12 Si adatoms in the unit cells can not be resolved. Hence, imaging the 7×7 superstructures below thin films at the atomic scale has not been achieved. In this work, we have grown the Cd epitaxial films with high quality on Si(111)-7×7 substrate, and realized the imaging of interface structure of Cd(0001) at atomic scale by using low temperature scanning tunneling microscopy. Under low bias voltage, we can clearly observe the atomic image of Si(111)-7×7, indicating the Si (111)-7×7 substrate remains intact during the growth process of Cd films. Moreover, due to the quantum size effect, the Cd films with even or odd monolayers exhibit distinct lateral resolution as well as surface roughness, even at the same bias voltage. With the bias variation, such kind of diversities can be reversed. We attribute the highly transparency of Cd(0001) films to the anisotropic effective mass of the electrons in Cd films, i.e. the transverse motion is much faster than the in-plane motion.

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

Growth Mechanism of Polycrystalline CsI(Tl) Films on Glass and Single Crystal Si Substrates

Study on Cracks of Columnar CsI(Tl) Scintillation Films

Fabrication and Performance of Micron Thick CsI(Tl) Films for X-Ray Imaging Application

Study on the Effect of Film Formation Process and Deposition Rate on the Orientation of the Csi: Tl Thin Film

Improved Epitaxy of CsI(Tl) Film on Si Substrate Buffered by Graphene for X-ray Detection

Influence of the Crystal Characterization of CsI Thin Film for X-Ray Image Detectors

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

The Structure and Optical Properties of SiC Film on Si (111) Substrate with a ZnO Buffer Layer by RF-magnetron Sputtering Technique

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Oriented-Structured CsCu2I3 Film by Close-Space Sublimation and Nanoscale Seed Screening for High-Resolution X-ray Imaging

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Performance assessment of CsI(Tl) screens on various substrates for X-ray imaging

Scintillation Properties of Cs3Cu2I5:<…

Influence of the Humid Air on the Structure and Fluorescent Property of CsI:Tl Thin Film

Scintillation properties of<i> Cs3Cu2I5:Tl</i> crystals grown by Cz, EFG and Bridgman methods with a multifunctional melt growth furnace

The Transparency of Cd(0001) Films Grown on Si(111)-7×7:Imaging the Interface at Atomic Scale

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Structural characterization of as-deposited cesium iodide films studied by X-ray diffraction and transmission electron microscopy techniques

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals