Abstract:In this work, the gate controllability of WSe2 channel with varying thickness from monolayer to ten‐layer is investigated, by fabricating van der Waals contacted WSe2 devices. The findings demonstrate negligible hysteresis and excellent subthreshold swing observed when utilizing WSe2 channel thicknesses ≥ five‐layer. However, by reducing the WSe2 channel thickness below the trilayer, the subthreshold swing deviates from the thermal limit. The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted p‐FETs, varying the WSe2 channel thickness from monolayer to ten‐layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state‐of‐the‐art Si transistors, when utilizing WSe2 channel thicknesses ≥ five‐layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface‐contacted 2D transistors. Furthermore, all devices exhibit consistent p‐type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.

Carrier Type Control Of Wse2 Field-Effect Transistors By Thickness Modulation And Moo3 Layer Doping

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

Controllable Doping in 2D Layered Materials

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics

Realizing Stable P-Type Transporting in Two-Dimensional WS2 Films.

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

The ambipolar transport behavior of WSe 2 transistors and its analogue circuits

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS 2 and WS 2 for Semiconductor Devices with Tunable Functionality

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Tunable Transfer Behaviors of Single-Layer Wse2 Field Effect Transistors by Hydrazine

Wafer-Scale Synthesis of WS2 Films with in Situ Controllable P-Type Doping by Atomic Layer Deposition

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Controlling phase transition in WSe2 towards ideal n-type transistor

Precise P-Type and N-Type Doping of Two-Dimensional Semiconductors for Monolithic Integrated Circuits