Abstract:Herein, a competitive ZT of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29 × 1019 cm−3 at room temperature. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3. The Bi2Te3 family has been considered a state‐of‐the‐art thermoelectric material for room‐temperature applications for over half a century. However, scarcity of the material Te has been a persistent issue. Recently, the discovery of n‐type Mg3(Bi, Sb)2‐based materials provides new hope for replacing traditional Bi2Te3, but their thermoelectric properties near room temperature still need improvement for application to practical devices. Herein, a competitive figure of merit of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29×1019 cm−3 at room temperature. Substituting the Mg site with Mn in Mg3.2Bi1.4Sb0.59Se0.01 changes the dominant carrier scattering mechanism from a mixed scattering of acoustic phonons and ionized impurities to acoustic phonon scattering. Mn doping in Mg3.2Bi1.4Sb0.59Se0.01 also enhances the mobility to 180 cm2 V−1 s−1, reduces the thermal conductivity, and significantly increases the quality factor β of the material. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3.

Contrasting the Role of Mg and Ba Doping on the Microstructure and Thermoelectric Properties of p-Type AgSbSe2

Modulated Fermi Level and Relaxed Lattice Strain Leading to Enhanced Thermoelectric Properties in AgSbSe 2

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

The Critical Role of Boron Doping in the Thermoelectric and Mechanical Properties of Nanostructured Α-Mgagsb

Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Understanding the Influence of Bi/Sb Substitution on Carrier Concentration in Mg3Sb2-based Materials: Decreasing Bandgap Enhances the Degree of Impurity Ionization

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Effect of Sb-Doping on the Thermoelectric Properties of Mg2Si Based Compounds

Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Promising thermoelectric performance in p-type AgBiSe 2 doping with alkaline-earth metals

Unusual Consequences of Donor and Acceptor Doping on the Thermoelectric Properties of the MgAg0.97Sb0.99 Alloy

Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

The Influence of Doping Sites on Achieving Higher Thermoelectric Performance for Nanostructured Α-Mgagsb

Enhanced Thermoelectric Performance of AgSbSe2 Via Manganese Doping

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Electronic structure and transport property of p-type Mg3Sb2 from first-principles study

Effect of the Na Doping on the Structure and Thermoelectric Properties of AgSbSe2

Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature