Mn-doping method boosts Se doping concentration in Cu2S towards high thermoelectric performance
Chen Gong,Zhiwei Zeng,Xiaoling Sun,Chengran Luo,Hongyi Chen
DOI: https://doi.org/10.1039/d4tc03056g
IF: 6.4
2024-10-20
Journal of Materials Chemistry C
Abstract:Copper chalcogenides have garnered attention as promising thermoelectric materials, owing to their environmental benignity, cost-effectiveness, and superior thermoelectric performance. Anionic doping within the same group is the effective method for copper chalcogenides to improve thermoelectric performance, but Se-doped Cu2S containing a large fraction of secondary phase leading to poor thermoelectric properties. In this study, we have refined the thermoelectric properties of Cu2S by extending the concentration limit of Se-doping concentration. Our findings reveal that the incorporation of 2% Mn significantly elevates the concentration limit of Se from 1.5% to 5%. Increased Se doping effectively narrowes the band gap, augmenting the carrier concentration to an optimal level. Furthermore, it also adjusts the electronic structure, enabling additional bands to contribute to electron transport, which results in elevated weighted mobility, and consequently, enhanced electrical conductivity performance. Additionally, the Se doping introduces dislocations and lattice distortions that bolster alloy scattering, thereby diminishing lattice thermal conductivity. As a result, the zT of Cu1.96Mn0.02S0.95Se0.05 reaches a peak of 0.97 at 723 K, which is 3.8 times that of Cu2S, and at a high level compared with reported Cu2S-based materials. Hence, our research underscores the efficacy of co-doping as a strategy to expand the Se-doping concentration limit, and anionic doping within the same group can optimize the thermoelectric properties of Cu2S-based materials.
materials science, multidisciplinary,physics, applied