Abstract:This paper employs the tight-binding model to investigate the thermal properties of tetragonal Germanene (T-Ge) affected by external fields and doping. T-Ge is a two-dimensional material with unique electronic properties, including zero band gap and two Dirac points. The electronic properties of T-Ge can be influenced by bias voltage, which can open its band gap and convert it to a semiconductor due to its buckling structure. The tunable band gap of biased T-Ge, makes it a a promising option for electronic and optoelectronic devices. The band structure of T-Ge is split by the magnetic field, leading to an increases its band edges due to the Zeeman Effect. The findings demonstrate that the thermoelectric properties of T-Ge are highly sensitive to external parameters and modifications of the band structure. The thermal and electrical conductivity of T-Ge increase with increasing temperature due to the rise in thermal energy of charge carriers. The thermoelectric properties of T-Ge decrease with bias voltage due to band gap opening, increase with the magnetic field due to a modifications of the band structure, and increase with chemical potential due to increasing density of charge carriers. By manipulating the band structure of T-Ge through bias voltage and chemical doping, the electrical conductivity can be optimized to achieve higher figure of merit (ZT) and improved thermoelectric performance. The results demonstrate the potential of T-Ge for use in electronic and magnetic devices, opening up new possibilities for further research and development in this field.

Tunable Electronic and Optical Behaviors of Two-Dimensional Germanium Carbide

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

New stable 2D and 3D GeC2 crystal structures predicted by first-principles study

Two-Dimensional Ges with Tunable Electronic Properties Via External Electric Field and Strain

Electronic and optical properties of Germagraphene, a direct band-gap semiconductor

Tunable electronic and optical properties of GeC/g-C3N4 vdWH by electric field and biaxial strain

Tunable Electronic and Topological Properties of Germanene by Functional Group Modification

Investigation of Electronic Properties and Dielectric Response of Two-Dimensional Germanium Selenide with Puckered and Buckled Structures

Unexpected Band Gap Evolution and High Carrier Mobility Sparked by the Orbital Variation in Two-Dimensional GaGeX (X = S, Se, Te)

Electronic structural critique of interesting thermal and optical properties of C$_{17}$Ge germagraphene

Optical and Electronic Properties of Two Dimensional Graphitic Silicon Carbide

Graphene/g-GeC Bilayer Heterostructure: Modulated Electronic Properties and Interface Contact Via External Vertical Strains and Electric Fileds

Investigation of anisotropic mechanical, electronic, and charge carrier transport properties of germanium-pnictogen monolayers

Strain Engineering Tunable Electronic Conductivity in Two- Dimensional Γ-Gese

Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Tunable band gap and enhanced thermoelectric performance of tetragonal Germanene under bias voltage and chemical doping

Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study

Unconventional Two-Dimensional Germanium Dichalcogenides

GaTe/CdS heterostructure with tunable electronic properties via external electric field and biaxial strain