Addressing sodium ion-related degradation in SHJ cells by the application of nano-scale barrier layers

Xinyuan Wu,Chandany Sen,Haoran Wang,Xutao Wang,Yutong Wu,Muhammad Umair Khan,Lizhong Mao,Fangdan Jiang,Tao Xu,Guangchun Zhang,Bram Hoex
DOI: https://doi.org/10.1016/j.solmat.2023.112604
IF: 6.9
2023-10-22
Solar Energy Materials and Solar Cells
Abstract:Silicon heterojunction (SHJ) solar cells are renowned for their high efficiency. However, SHJ solar cells are susceptible to various contaminants, leading to significant performance degradation when exposed to damp-heat conditions (e.g., 85 °C and 85% relative humidity). Sodium (Na) has been identified as one of the main contributors to degradation in silicon solar modules subjected to damp-heat conditions. This work investigates the role of an ultra-thin AlO x capping layer (∼10 nm) in preventing the failure in SHJ cells caused by Na-related contaminants. NaCl is applied directly to the solar cell, and the unencapsulated cell undergoes a damp heat test at 85 °C and 85% relative humidity (DH85). It is found that without the AlO x barrier layer, the SHJ cells experience a relative reduction in power of ∼30% rel after only 20 h at DH85. Both the front and rear sides of the cell degrade when exposed to NaCl. This is primarily due to a deterioration of the Ag contact resulting in increased series resistance ( R s ), and decrease in fill factor ( FF ), and an increase in recombination, leading to a significant drop in open-circuit voltage ( V oc ), particularly when NaCl is applied on the rear side. However, when an AlO x barrier layer is applied to the SHJ cells, the performance losses caused by NaCl are significantly reduced to only ∼3.3% rel . The loss in V oc on the rear side is completely suppressed, and there is only a slight increase in R s of ∼50% rel compared to ∼300% rel increase in R s for cells without the AlO x barrier layer. These findings indicate that the ultra-thin AlO x barrier layer provides effective protection for SHJ cells against Na ions, mitigating both R s and recombination losses. This AlO x barrier layer depositing method is compatible with existing industrial mass-production ALD tools and thus presents a viable solution at the cell level for SHJ cells.
materials science, multidisciplinary,physics, applied,energy & fuels
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