Correlating the three-dimensional atomic defects and electronic properties of two-dimensional transition metal dichalcogenides
Xuezeng Tian,Dennis S. Kim,Shize Yang,Christopher J. Ciccarino,Yongji Gong,Yongsoo Yang,Yao Yang,Blake Duschatko,Yakun Yuan,Pulickel M. Ajayan,Juan Carlos Idrobo,Prineha Narang,Jianwei Miao
DOI: https://doi.org/10.1038/s41563-020-0636-5
IF: 41.2
2020-03-09
Nature Materials
Abstract:The electronic, optical and chemical properties of two-dimensional transition metal dichalcogenides strongly depend on their three-dimensional atomic structure and crystal defects. Using Re-doped MoS<sub>2</sub> as a model system, here we present scanning atomic electron tomography as a method to determine three-dimensional atomic positions as well as positions of crystal defects such as dopants, vacancies and ripples with a precision down to 4 pm. We measure the three-dimensional bond distortion and local strain tensor induced by single dopants. By directly providing these experimental three-dimensional atomic coordinates to density functional theory, we obtain more accurate electronic band structures than derived from conventional density functional theory calculations that relies on relaxed three-dimensional atomic coordinates. We anticipate that scanning atomic electron tomography not only will be generally applicable to determine the three-dimensional atomic coordinates of two-dimensional materials, but also will enable ab initio calculations to better predict the physical, chemical and electronic properties of these materials.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter