Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Correlating the three-dimensional atomic defects and electronic properties of two-dimensional transition metal dichalcogenides

Correlating 3D Atomic Defects and Electronic Properties of 2D Materials with Picometer Precision

Correlating 3D atomic defects and electronic properties of 2D materials with picometer precision.

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Quantitatively Deciphering Electronic Properties of Defects at Atomically Thin Transition-Metal Dichalcogenides.

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

First principles coupled cluster theory of the electronic spectrum of the transition metal dichalcogenides

Atomic Structure of Defects and Dopants in 2D Layered Transition Metal Dichalcogenides.

Defect dependent electronic properties of two- dimensional transition metal dichalcogenides (2H, 1T, 1T' phase)

Probing Functional Structures, Defects, and Interfaces of 2D Transition Metal Dichalcogenides by Electron Microscopy

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Atomic Structure and Spectroscopy of Single Metal (cr, V) Substitutional Dopants in Monolayer MoS2

Direct Optical-Structure Correlation in Atomically Thin Dichalcogenides and Heterostructures

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Order and randomness in dopant distributions: exploring the thermodynamics of solid solutions from atomically resolved imaging

Single atom chemical identification of TMD defects in ambient conditions