Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Electrical Control over Perpendicular Magnetization Switching Driven by Spin-Orbit Torques

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Frontiers in all electrical control of magnetization by spin orbit torque

Control of damping in perpendicularly magnetized thin films using spin-orbit torques

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Spin current control of magnetism

In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Oscillatory spin-orbit torque switching induced by field-like torques

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Electrical manipulation of magnetization in magnetic heterostructures with perpendicular anisotropy

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source

Spin-orbit Torques in Perpendicularly Magnetized Ir22Mn78/Co20Fe60B20/MgO Multilayer

Simulation of Electric-Field and Spin-Transfer-Torque Induced Magnetization Switching in Perpendicular Magnetic Tunnel Junctions

Magnetization switching of a nearly compensated ferrimagnet by enhanced spin-orbit torque