Abstract:As a wide bandgap semiconductor, SiC holds great importance for high temperature and high power devices. It is known that the intrinsic defects play key roles in determining the overall electronic properties of semiconductors; however, a comprehensive understanding of the intrinsic defect properties in the prototype 4H-SiC is still lacking. In this study, we have systematically investigated the electronic properties and kinetic behaviors of intrinsic point defects and defect complexes in 4H-SiC using advanced hybrid functional calculations. Our results show that all the point defects in 4H-SiC have relatively high formation energies, i.e., low defect concentrations even at high growth temperatures. Interestingly, it is found that the migration barriers are very high for vacancies (>3 eV) but relatively low for interstitial defects (∼1 eV) in SiC. Meanwhile, the diffusion energy barriers of defects strongly depend on their charge states due to the charge-state-dependent local environments. Furthermore, we find that VSi in SiC, a key defect for quantum spin manipulation, is unstable compared to the spin-unpolarized VC–CSi complex in terms of the total energy (under p-type conditions). Fortunately, the transformation barrier from VSi to VC–CSi is as high as 4 eV, which indicates that VSi could be stable at room (or not very high) temperature.

Disentangling Defect-Induced Ferromagnetism in SiC

Rise and fall of defect induced ferromagnetism in SiC single crystals

Defect induced ferromagnetism in 4H-SiC single crystals

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Defects Mediated Ferromagnetism in a V-doped 6H-Sic Single Crystal

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Theoretical Study of Magnetic Moments Induced by Defects at the SiC (110) Surface

Revealing defect-induced spin disorder in nanocrystalline Ni

Net Dzyaloshinskii-Moriya interaction in defect-enriched ferromagnet

Effect of defects on optical phonon Raman spectra in SiC nanorods

Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators

First-principles Studies of Charged Defect States in Intrinsic Ferromagnetic Semiconductors: the Case of Monolayer CrI3

Atomic-scale revealing defects in ion irradiated 4H-SiC

Investigation Magnetism State of Undoped Surface of 4H-Sic

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl$_3$

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides

Room-temperature coherent control of implanted defect spins in silicon carbide

Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.