Abstract:The configurations of 10 types of metal-doped silicon carbide (SiC) systems were investigated by the first-principles calculations. The dopants include eight types of 3d-series transition metal atoms, one semi-metal Ge atom, and one other metal Al atom. For all the metal-doped SiC systems, the steadiest doping sites are fixed at the substituted Si site, while the Ti-SiC system exhibits the most potent binding activity. The properties of these new systems vary with the doping atoms. The SiC- and Al-SiC systems convert to magnetic metals. The Ti- and Ge-SiC systems remain non-magnetic semiconductors, while the V-, Cr-, Mn-, Fe-, Co-, and Zn-SiC systems turn into magnetic semiconductors with magnetic moments related to the valence electron number of dopants. Partial charge transfers from the metal atoms to the adjacent C atoms accompanied the change in the electron-emitting capacity of the new systems. The work function achieves the minimum of 3.439 eV in the Co-SiC system, just 71.6% of the original SiC system. Our analysis indicates that the potent binding energy of the Ti-SiC system is due to the complete bonding states between the transition metal Ti and the adjacent C atoms. The magnetism evolution in semiconducting metal-doped SiC is attributed to the occupation mode of the hybridization orbitals nearby the Fermi level, which are determined by the coupling of the 3d orbital of transition metal atoms and the defect states of the vacancy atoms. The adjustable magnetic and electronic properties of the metal-doped SiC systems provide a flexible method in designing more suitable SiC-based spintronics and field electron-emitting devices.

Investigation Magnetism State of Undoped Surface of 4H-Sic

Dopant-Induced Surface Magnetism in Β-Sic Controlled by Dopant Depth

Theoretical Study of Magnetic Moments Induced by Defects at the SiC (110) Surface

Magnetism in Transition metal doped Cubic SiC

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Defects Mediated Ferromagnetism in a V-doped 6H-Sic Single Crystal

Effect of Single Atom Doping on Structural, Electronic and Magnetic Properties of Hexagonal Silicon Carbide (4H-SiC) for Spintronic Application: A first principle study

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

Rise and fall of defect induced ferromagnetism in SiC single crystals

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Point Defects in Hexagonal SiP Monolayer: A Systematic Investigation on the Electronic and Magnetic Properties

Structural Characterization Of Mn Doped Sic Magnetic Thin Films

The Theoretical Study of Unexpected Magnetism in 2D Si-Doped AlN

Defect induced ferromagnetism in 4H-SiC single crystals

Magnetic and Defect Probes of the SmB6 Surface State

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface