Abstract:Although the success of graphene research has opened up a new route for wearable electronic and optoelectronic devices, producing graphene with controllable quality and cost-effective growth on a large scale remains challenging due to the lack of understanding about its growth kinetics. Domain boundaries interrupt lattice continuity of graphene; therefore, lowering the nucleation density at the initial stage of graphene growth in the chemical vapor deposition (CVD) process is beneficial for improving the quality of graphene for applications. Herein, we show that by forming an oxide passivation layer on Cu substrates before CVD graphene growth, graphene nucleation density can be effectively decreased. The nucleation mechanism in the presence of an oxide passivation layer is of interest. The analysis of graphene growth kinetics suggests that the thickness of the boundary layer for mass transfer on the substrate surface plays an important role in controlling the reduction rate of the oxide passivation layer. A thick boundary layer created under slow gas flow causes slow reduction of the oxide passivation layer, making finite sites for graphene nucleation. The domain density in a graphene layer is therefore significantly reduced. Graphene sheets of various domain densities (ranging from 104 to 1 mm-2) can be fabricated by suitably choosing the growth parameters. The graphene sheet with a lower density of domain boundaries exhibits better electrical conductivities.

Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer Patches During Cvd on Copper Foils

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Low-temperature quantum transport in CVD-grown single crystal graphene

Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil

Growth Kinetics and Defects of CVD Graphene on Cu

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Effects of Surface Engineering of Copper Catalyst on the CVD Growth of Boron-Doped Graphene with a Solid Carbon and Boron Source

Synthesis of Highly Uniform Monolayer Graphene by Etching the Multilayer Spots for Electronic Devices

Layered Graphene Growth Directly on Sapphire Substrates for Applications

High-Mobility Graphene on Liquid P-Block Elements by Ultra-Low-Loss Cvd Growth

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Quantum transport in CVD graphene synthesized with liquid carbon precursor

Single-step deposition of high-mobility graphene at reduced temperatures

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Low-Temperature Chemical Vapor Deposition Growth Of Graphene From Toluene On Electropolished Copper Foils