Abstract:Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51 × 10 -5 Ω·cm 2 and differential specific on-resistance of 0.58 mΩ·cm 2 , as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm 2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices.

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Gan Schottky Barrier Diodes On Free-Standing Gan Wafer

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination

50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

High-Performance GaN Vertical Schottky Barrier Diode with Self-Alignment Trench Structure

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10<SUP>10</SUP> High On/Off Current Ratio and Low Specific On-Resistance