A 1.65‐nW 11.14‐ppm/°C self‐biased subthreshold CMOS voltage reference with temperature compensation circuit
Yuxuan Huang,Jingjing Liu,Feng Yan,Yuchen Wang,Kangkang Sun,Weijie Ge
DOI: https://doi.org/10.1002/cta.4067
IF: 2.378
2024-05-10
International Journal of Circuit Theory and Applications
Abstract:The proposed subthreshold CMOS voltage reference based on stacked diode‐connected MOS transistors (SDMTs) includes temperature compensation circuits to expand its operating temperature range and reduce its temperature coefficient. This work demonstrates excellent performance characteristics and is well‐suited for low‐voltage and low‐power IoT self‐powered sensor applications. Summary This paper presents a subthreshold CMOS voltage reference (VR) that utilizes self‐biased circuits. This voltage reference includes temperature compensation circuits to expand its operating temperature range and reduce its temperature coefficient. The proposed CMOS voltage reference is designed using a standard 0.18‐μm CMOS process and has a small area of only 0.005 mm2. Post‐layout simulation results demonstrate that the power consumption of the circuit at room temperature (25°C) is only 1.65 nW at a power supply voltage of 1 V. In this case, the voltage reference output is 316.56 mV, with an average temperature coefficient (TC) of 11.14 ppm/°C in a wide temperature range from −40°C to 140°C. Furthermore, the line sensitivity (LS) of the circuit is 0.024%/V, and the power supply rejection ratio (PSRR) of the circuit is −86.5 dB at 10 Hz. In summary, the subthreshold CMOS voltage reference structure proposed in this paper demonstrates excellent performance characteristics, such as low power consumption, a small area, and high‐temperature stability. These features make it a promising candidate for voltage reference for low‐power applications with significant changes in environmental temperature.
engineering, electrical & electronic