Abstract:Amorphous oxide thin-film transistors (TFTs), including a-InGaZnO (IGZO) in particular, are promising devices for display and other applications. For commercial fabrication, IGZO is typically fabricated using vacuum-based methods, involving high costs and complex equipment. These drawbacks are overcome by cost-effective, solution-based processes, which, however, do not deliver the IGZO layer of the same quality as vacuum-based methods. This results in a trade-off between mobility and stability of the respective devices, diminishing their overall performance. The compromise between mobility and stability in these devices arises from defects, notably oxygen vacancies, during solution-based fabrication. Here, we suggest a solution to this problem by the introduction of a MgO or AlO x interlayer between the IGZO semiconductor and polymer insulator in a top-gate, bottom-contact TFT. The Mg and Al ions, originating from such an interlayer, suppress the appearance of the interfacial oxygen vacancies, serving as the major source of device instability, preserving at the same time bulk oxygen vacancies, promoting the mobility. In addition to this favorable function, the MgO/AlO x interlayer, characterized by a wide band gap, improves the performance of the joint dielectric layer by reducing the leakage current. As the result of both these favorable properties within the proposed strategy, a stable, hysteresis-free, and considerably performing device with a mobility of 4.6 cm 2 V −1 s −1 , an ON/OFF ratio exceeding >10 6.5 , and a shift of the threshold voltage of 0.6 V could be fabricated, with all these parameters being superior as compared to the standard TFTs.

Performance Enhancement of In-Ga-Zn-O TFTs Using Double-Layer Gate Dielectric

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature

Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors

Improvement of electrical properties of ZnO TFT with NbLaO-based stacked gate dielectrics

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Improvement of properties of top-gate IGZO TFT by oxygen-rich ultrathin in situ ITO active layer

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Performances of Self-Aligned Top-Gate A-Igzo TFTs with Ultrathin PECVD SiO2 Gate Dielectric

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer