Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

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Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Performance Enhancement of In-Ga-Zn-O TFTs Using Double-Layer Gate Dielectric

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors

Influence of Ga Doping on Electrical Performance and Stability of ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdOx Bilayer Gate Dielectrics

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In2O3 channel layers

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor