Abstract:The demand for high speed, high storage density, and low power consumption nonvolatile memory technology has stimulated extensive research into new functional materials. Resistive switching has been reported in multiferroic bismuth ferrite (BFO), in which the resistance can be switched between a high resistance state (IIRS) and a low resistance state (LRS). These two resistance states can stand for binary 0 and 1 in resistive -switch memory. In general, the metal/BFO/metal cell shows bipolar resistive switching that the set to a LRS occurs at one voltage polarity and the reset to the FIRS appears at reversal voltage polarity. It has been widely recognized that this so-called bipolar resistive switching is usually connected with a voltage-driven oxygen vacancy movement. However, BFO films exhibit p-type conduction as a result of Bi loss, and a Schottky junction or a p-n junction may be formed at the metal/BFO interface and can be modulated by the ferroelectric polarization, which induces blocking or non -blocking interfaces for the transport of carriers and consequent the resistive switching behavior. Here, we prepared PVBFO/SrRuO 3 /SrTiO 3 resistive device units and observed a repeatable and switchable resistive effect of BFO films with a tunable HRS/LRS ratios and a low resistance switching voltage of ±1.5 V, apart from the high forming voltage.

Bipolar Resistive Switching Effect in BiFeO 3 /Nb:SrTiO 3 Heterostructure by RF Sputtering at Room Temperature

Effect of Post-Deposition Annealing Pressure on Bipolar Resistive Switching in RF Sputtered BiFeO3/Nb:SrTiO3 Heterostructure

Nonvolatile Resistive Switching Behaviour and the Mechanism in Nd:BiFeO3/Nb:SrTiO3heterostructure

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

The Bipolar Resistive Switching in BiFeO 3 Films

Resistive Switching And Related Magnetization Switching In Pt/Bifeo3/Nb:Srtio3 Heterostructures

Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO 3 film

Resistive Switching in Pt/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Resistive Switching Effect and Conduction Mechanism of BiFeO3 Thin Films

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO 3 thin films on LaNiO 3 -electrodized Si substrates

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO<sub>3</sub> thin films on LaNiO<sub>3</sub>-electrodized Si substrates

Substrate Effect on the Resistive Switching in BiFeO3 Thin Films

Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Ferroelectric resistance switching in Pt/Fe/BiFeO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures

Impulse Voltage Control of Continuously Tunable Bipolar Resistive Switching in Pt/Bi 0.9 Eu 0.1 FeO 3 /Nb-Doped SrTiO 3 Heterostructures

Ferroelectric resistance switching in Pt/Fe/BiFeO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub>heterostructu res

Interface-related resistive switching in BiFeO 3 thin films

Bipolar resistive switching based on SrTiO3/YBa 2Cu3O7 epi-layers

Ferroelectric resistance switching in Pt/Fe/BiFeO 3 /SrRuO 3 /SrTiO 3 heterostructures.

Fabrication and Mechanism of High Performance Bipolar Resistive Switching Device Based on SrTiO3/NiO Stacked Heterostructure

Bipolar resistive switching and its temperature dependence in the composite structure of BiFeO3 bilayer