Effects of O2 Partial Pressure on Composition and Infrared Emissivity of PtOx Films Prepared by Reactive Magnetron Sputtering

Wenbo Kang,Dongmei Zhu,Zhibin Huang,Fa Luo

DOI: https://doi.org/10.1007/s11664-018-6128-6

IF: 2.1

2018-01-01

Journal of Electronic Materials

Abstract:PtO x films have been prepared by reactive magnetron sputtering on glass substrates without external heating and characterized by x-ray diffraction (XRD) analysis, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The resulting PtO x films mainly consisted of amorphous PtO and PtO2, and the composition largely depended on the O2 partial pressure during sputtering. In this study, the effects of the O2 partial pressure on the deposition rate, composition, surface morphology, structure, electrical resistivity, and infrared emissivity of the as-deposited PtO x films were evaluated. It was found that, with increase in the O2 partial pressure, the O/Pt atomic ratio, resistivity, and infrared emissivity of the as-deposited PtO x film increased, while the deposition rate first increased then decreased with increasing O2 partial pressure. In addition, the O2 partial pressure had little influence on the structure or surface morphology of the as-deposited PtO x film.