Simultaneous Ultra-Long Data Retention and Low Power Based on Ge10Sb90/SiO2 Multilayer Thin Films

Haipeng You,Yifeng Hu,Xiaoqin Zhu,Hua Zou,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1007/s00339-017-1519-8

2018-01-01

Applied Physics A

Abstract:In this article, Ge 10 Sb 90 /SiO 2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge 10 Sb 90 monolayer thin film, Ge 10 Sb 90 (1 nm)/SiO 2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge 10 Sb 90 (1 nm)/SiO 2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge 10 Sb 90 (1 nm)/SiO 2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge 10 Sb 90 (1 nm)/SiO 2 (9 nm) thin film (2.29 ns) is shorter than Ge 2 Sb 2 Te 5 (3.56 ns). The threshold voltage of a cell based on Ge 10 Sb 90 (1 nm)/SiO 2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge 10 Sb 90 /SiO 2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.