Abstract:The crystal structures and properties of boron-silicon (B-Si) compounds under pressure have been systematically explored using particle swarm optimization structure prediction method in combination with first-principles calculations. Three new stoichiometries, B2Si, BSi, and BSi2, are predicted to be stable gradually under pressure, where increasing pressure favors the formation of silicon rich B-Si compounds. In the boron-rich compounds, the network of boron atoms changes from B-12 icosahedron in the ambient phases to the similar buckled graphenelike layers in the high-pressure phases, which crystalize in the same P (3) over bar m1 symmetry but with different numbers of boron layers between adjacent silicon layers. Phonon calculations show that these structures might be retained to ambient conditions as metastable phases. Further electron-phonon coupling calculations indicate that the high-pressure phases of boron-rich compounds might superconduct at 1 atm, with the highest T-c value of 21 K from the Allen-Dynes equation in P (3) over bar m1 B2Si, which is much higher than the one observed in boron doped diamond-type silicon. Moreover, further fully anisotropic Migdal-Eliashberg calculations indicate that B2Si is a two-gap anisotropic superconductor and the estimated T-c might reach up to 30 K at 1 atm. On the silicon-rich side, BSi2 is predicted to be stable in the CuAl2-type structure. Our current results significantly enrich the phase diagram of the B-Si system and will stimulate further experimental study.

A Comprehensive Study of the High-Pressure–temperature Phase Diagram of Silicon

Temperature–pressure phase diagram of silicon determined by Clapeyron equation

In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

First-principles study of pressure-induced phase transition in silicon carbide

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

High pressure superconductivity of silicon

Novel Structural Phases and the Electrical Properties of Si3B under High Pressure.

Effect of pressure on melting temperature of silicon determined by Clapeyron equation

Theoretical Study on the High-Temperature P6̄ and P6̄′ Phases of Si3N4: A Tool to Aid in Ceramics Development

Prediction Of Superconductivity In Pressure-Induced New Silicon Boride Phases

Thermal Equation of State of Silicon Carbide

Periodic DFT Calculation of the Pressure-Induced Phase Transition and Thermodynamical Properties of Magnesium Silicide Polymorphs

High Pressure Structural Behavior of Silicon Telluride (Si2Te3) Nanoplates

Phase transition character and thermodynamic modeling of the P6 and P6' hexagonal Si-N system supplemented by first-principles calculations

First-Principles Investigation of Elastic and Thermodynamic Properties of Sicn under Pressure

Crystal Structures of Silicon-Rich Lithium Silicides at High Pressure

Ionic structure, Liquid-liquid phase transitions, X-Ray diffraction, and X-Ray Thomson scattering in shock compressed liquid Silicon in the 100-200 GPa regime

Phase Transition, Electronic And Optical Properties Of Si3n4 New Phases At High Pressure With Density Functional Theory

Phase transitions and superconductivity in ternary hydride Li2SiH6 at high pressures

Uniaxial Phase Transition in Si : Ab initio Calculations

A study of the phase transitions, electronic structures and optical properties of Mg2Si under high pressure