Epitaxial Growth of BaHfO3 Buffer Layer and Its Structure Degeneration Analysed by Raman Spectrum.

Jiahui Zheng,Feng Fan,Xiangfa Yan,Yuming Lu,Yu Liang,Chuanyi Bai,Zhiyong Liu,Yanqun Guo,Chuanbing Cai
DOI: https://doi.org/10.1186/s40064-016-3563-9
2016-01-01
SpringerPlus
Abstract:BaHfO 3 (BHO) has been proposed as a new cap layer material for YBa 2 Cu 3 O 7−δ (YBCO) coated conductors. Highly c-axis oriented BHO cap layer has been deposited on ion-beam assisted deposition-MgO buffered Hastelloy tapes by direct-current-magnetron sputtering method. The epi-growth of BHO films combined with its properties is investigated in details. The degenerated cubic crystal structure of BHO film is confirmed by Raman spectrum analysis. XRD θ–2θ scan, φ-scan and ω-scan reveal an excellent c-axis alignment with good in-plane and out-of-plane textures for BHO cap layers. SEM and AFM investigations show BHO cap layer a dense and crack-free morphology. Subsequently pure c-axis orientation YBCO film was epitaxial grown on such BHO cap layer successfully, shown BaHfO 3 a potential cap layer material for coated conductors.
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