Abstract:Fabrication of oxide thin film transistor (TFT) arrays by inkjet printing with small spacing was investigated, aiming at printing high resolution display backplanes. Two processes are involved during the printing and drying of oxide ink drops; the initial ink drop spreads to a large size upon landing on a substrate and then shrinks to a small size after the solvent dries out. The spreading of the ink drop determines how close two ink drops can be placed and the shrinkage of the ink drop after drying determines the final thickness of the printed dot. It was found that by hydrophobic treatment of the substrate surface with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS) assembly, the minimum spacing (center-to-center distance) of the printed oxide dot array was reduced from over 80 mu m to 45 mu m (HMDS treated) and 35 mu m (OTS treated), while the dot diameters simultaneously decreased from 70 mu m to 20 mu m (HMDS treated) and 15 mu m (OTS treated). However, too much shrinking caused random movement of the ink drops and an increase of oxide layer thickness, both of which are detrimental to the performance of printed TFTs. To overcome these problems, the ink viscosity was adjusted by adding polyvinylpyrrolidone (PVP) to the ink. With the increase of ink viscosity, the random movement of the ink drops was suppressed and the smallest spacing of 50 mu m was achieved for printed oxide TFT arrays. Printed IGZO-TFTs annealed at 350 degrees C exhibited the highest mobility of about 6.2 cm(2) V-1 s(-1) and on-to-off current ratio of more than 10(7).

Direct Patterning of Silver Electrodes with 2.4 Μm Channel Length by Piezoelectric Inkjet Printing

Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors.

A Strategy Toward Realizing Ultrashort Channels and Microstructures Array by Piezoelectric Inkjet Printing

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

Facile Inkjet-Printing Self-Aligned Electrodes for Organic Thin-Film Transistor Arrays with Small and Uniform Channel Length

Fully Inkjet-Printed Short-Channel Metal-Oxide Thin-Film Transistors Based On Semitransparent Ito/Au Source/Drain Electrodes

Regulation Rules of Piezoelectric Waveform on Ink-jet Printing Electrode

High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

Inkjet Printed Electrodes in Thin Film Transistors

Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink

Inkjet Printing Satellite-Free Silver Electrodes Array in A-Igzo TFTs by Regulating Piezoelectric Waveforms

A Strategy toward Realizing Narrow Line with High Electrical Conductivity by Electrohydrodynamic Printing

Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes

Transistors: Inkjet Printing Short‐Channel Polymer Transistors with High‐Performance and Ultrahigh Photoresponsivity (adv. Mater. 27/2014)

Inkjet Printing Narrow Fine Ag Lines on Surface Modified Polymeric Films

Controlling the Surface Wettability of the Polymer Dielectric for Improved Resolution of Inkjet-Printed Electrodes and Patterned Channel Regions in Low-Voltage Solution-Processed Organic Thin Film Transistors

Newly developed silver nanoparticle ink for organic TFT circuits fabricated with high resolution printing system

Direct Patterning by Inkjet Printing 3-Mercaptopropionic Capped Nano Silver Suspension

Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel

National engineering lab of TFT-LCD materials and technologies