A 10 Nm Short Channel MoS 2 Transistor Without the Resolution Requirement of Photolithography (adv. Electron. Mater. 12/2021)
Fan Wu,Jie Ren,Yi Yang,Zhaoyi Yan,He Tian,Guangyang Gou,Xuefeng Wang,Zijian Zhang,Xin Yang,Xing Wu,Tian‐Ling Ren
DOI: https://doi.org/10.1002/aelm.202170057
IF: 6.2
2021-01-01
Advanced Electronic Materials
Abstract:Advanced Electronic MaterialsVolume 7, Issue 12 2170057 Inside Back CoverFree Access A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography (Adv. Electron. Mater. 12/2021) Fan Wu, Fan WuSearch for more papers by this authorJie Ren, Jie RenSearch for more papers by this authorYi Yang, Yi YangSearch for more papers by this authorZhaoyi Yan, Zhaoyi YanSearch for more papers by this authorHe Tian, He TianSearch for more papers by this authorGuangyang Gou, Guangyang GouSearch for more papers by this authorXuefeng Wang, Xuefeng WangSearch for more papers by this authorZijian Zhang, Zijian ZhangSearch for more papers by this authorXin Yang, Xin YangSearch for more papers by this authorXing Wu, Xing WuSearch for more papers by this authorTian-Ling Ren, Tian-Ling RenSearch for more papers by this author Fan Wu, Fan WuSearch for more papers by this authorJie Ren, Jie RenSearch for more papers by this authorYi Yang, Yi YangSearch for more papers by this authorZhaoyi Yan, Zhaoyi YanSearch for more papers by this authorHe Tian, He TianSearch for more papers by this authorGuangyang Gou, Guangyang GouSearch for more papers by this authorXuefeng Wang, Xuefeng WangSearch for more papers by this authorZijian Zhang, Zijian ZhangSearch for more papers by this authorXin Yang, Xin YangSearch for more papers by this authorXing Wu, Xing WuSearch for more papers by this authorTian-Ling Ren, Tian-Ling RenSearch for more papers by this author First published: 09 December 2021 https://doi.org/10.1002/aelm.202170057AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Short-Cannel MoS2 Transistors Yi Yang, He Tian, Xing Wu, Tian-Ling Ren, and colleagues demonstrate a photolithography resolution-independent method to realize 10 nm short-channel MoS2 transistors in article 2100543. By depositing the noble electrode partially on the self-oxidized aluminum electrode, the channel length is directly defined by the ≈10 nm thickness of oxidization layer, which can provide new opportunities for scaling down 2D materials-based transistors. Volume7, Issue12December 20212170057 RelatedInformation